IXGP16N60C2D1 IXYS, IXGP16N60C2D1 Datasheet

IGBT 600V 40A FRD TO-220

IXGP16N60C2D1

Manufacturer Part Number
IXGP16N60C2D1
Description
IGBT 600V 40A FRD TO-220
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGP16N60C2D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 12A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
16
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Tfi, Typ, Tj=25°c, Igbt, (ns)
33
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.27
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
11
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGP16N60C2D1
Manufacturer:
NXP
Quantity:
10 000
HiPerFAST
C2-Class High Speed
w/ Diode
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
F
T
T
Weight
Symbol
(T
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
J
JM
stg
C
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
1.6mm (0.062 in.) from Case for 10s
TO-263
TO-220
TO-247
T
T
Continuous
Transient
T
T
T
T
V
Clamped Inductive load
T
Mounting Torque (TO-220 & TO-247)
Mounting Force (TO-263)
Maximum Lead Temperature for Soldering
I
V
V
I
Test Conditions
Test Conditions
C
C
J
J
C
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
= 12A, V
= 250μA, V
= V
= 0V, V
TM
CES
, V
IGBTs
GE
J
GE
= 125°C, R
GE
= ±20V
= 15V, Note1
CE
= 0V
= V
GE
GE
G
= 1MΩ
= 22Ω
T
T
J
J
= 125°C
= 125°C
IXGA16N60C2D1
IXGP16N60C2D1
IXGH16N60C2D1
10..65 / 2.2..14.6
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
V
Maximum Ratings
CE
I
1.13/10
CM
≤ ≤ ≤ ≤ ≤ V
= 32
600
600
±20
±30
100
150
150
300
260
Typ.
2.5
CES
3.0
6.0
1.8
40
16
11
Nm/lb.in.
±100 nA
Max.
3.0
5.5
25 μA
1 mA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
g
g
g
V
I
V
t
Features
Advantages
Applications
TO-263 AA (IXGA)
TO-220AB (IXGP)
TO-247 (IXGH)
G = Gate
E = Emitter
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
D
C
C E
≤ ≤ ≤ ≤ ≤ 3.0V
= 600V
= 16A
= 33ns
S
E
G
E
C
Tab = Collector
C (Tab)
C (Tab)
C (Tab)
= Collector
DS99179B(08/10)

Related parts for IXGP16N60C2D1

IXGP16N60C2D1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 12A 15V, Note1 CE(sat © 2010 IXYS CORPORATION, All Rights Reserved IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 100 = 22Ω ≤ ≤ ≤ ≤ ≤ CES 150 -55 ... +150 150 -55 ... +150 1.13/10 10..65 / 2.2..14.6 ...

Page 2

... Characteristic Values Min. Typ 125°C 1.7 J 2.5 = 125°C 110 30V R (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 Max 0. 0.83 °C/W °C/W °C/W Max. 3 2.5 °C ...

Page 3

... L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 © 2010 IXYS CORPORATION, All Rights Reserved IXGA16N60C2D1 TO-220 (IXGP) Outline Pins Gate 2 - Collector 3 - Emitter IXGP16N60C2D1 IXGH16N60C2D1 TO-247 (IXGH) AD Outline 1 = Gate 2 = Collector 3 = Emitter ...

Page 4

... T = 25º IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 24A 12A Degrees Centigrade J Fig. 6. Input Admittance 40ºC J 25ºC 125º ...

Page 5

... J 14 25ºC 12 125º ies oes Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 Fig. 8. Gate Charge V = 300V 12A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC J Ω < 10V / ns 100 150 200 250 300 350 ...

Page 6

... Ω 15V G GE 120 V = 400V 120 CE 110 100 100 IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current - - - - E E off on Ω 15V 400V 125º 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance t ...

Page 7

... 100 19 d(on) 19.0 Ω 15V G GE 18.5 = 400V CE 18.0 17.5 17.0 16.5 16.0 15.5 15 105 115 125 IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 400V 25ºC, 125º Amperes C 19.0 18.5 18.0 17.5 17.0 16.5 16 ...

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