IXGP16N60C2D1 IXYS, IXGP16N60C2D1 Datasheet - Page 4

• Manufacturer Part Number: IXGP16N60C2D1
• Description: IGBT 600V 40A FRD TO-220
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGP16N60C2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 12A
• Current - Collector (ic) (max): 40A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 16
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 33
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.27
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 11
• Rthjc, Max, Diode, (ºc/w): 2.5
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
24
20
16
12
24
20
16
12
8
4
0
8
4
0
0.0
0
7
8
0.5
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
Fig. 5. Collector-to-Emitter Voltage vs.
9
1.0
1
6A
Gate-to-Emitter Voltage
12A
10
V
1.5
CE
1.5
I
V
C
V
CE
- Volts
GE
= 24A
V
- Volts
11
GE
- Volts
V
= 15V
GE
2.0
13V
12V
11V
2
= 15V
13V
12V
12
2.5
2.5
J
J
13
= 125ºC
= 25ºC
11V
10V
10V
9V
8V
7V
6V
9V
8V
7V
6V
T
3.0
J
3
= 25ºC
14
3.5
3.5
15
110
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
90
80
70
60
50
40
30
20
10
35
30
25
20
15
10
0
5
0
IXGA16N60C2D1
0
4
0
Fig. 2. Extended Output Characteristics @ T
V
GE
= 15V
5
25
5
Fig. 4. Dependence of V
6
Fig. 6. Input Admittance
Junction Temperature
10
50
T
J
- Degrees Centigrade
V
CE
7
V
T
GE
- Volts
J
= - 40ºC
15
75
- Volts
125ºC
IXGH16N60C2D1
25ºC
IXGP16N60C2D1
I
I
I
C
C
8
C
= 24A
= 12A
= 6A
CE(sat)
100
20
9
V
GE
on
= 15V
125
J
14V
25
10
= 25ºC
13V
12V
11V
10V
9V
8V
7V
150
11
30