IRG4BC20MD-SPBF International Rectifier, IRG4BC20MD-SPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4BC20MD-SPBF
• Description: IGBT N-CH W/DIODE 600V 18A D2PAK
• Manufacturer: International Rectifier

Specifications of IRG4BC20MD-SPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 11A
• Current - Collector (ic) (max): 18A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Dc Collector Current: 18A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 600V
• Collector Emitter Saturation Voltage Vce(sat): 2.1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: *IRG4BC20MD-SPBF

IRG4BC20MD-S
Switching Characteristics @ T
Electrical Characteristics @ T
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
V
V
V
g
I
V
I
d(on)
f
d(on)
f
r
d(off)
r
d(off)
rr
rr
CES
GES
E
on
V
V
fe
off
ts
ts
ies
oes
res
(BR)CES
CE(on)
GE(th)
g
gc
(rec)M
FM
rr
2
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current ----
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage ----
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
4.0
3.0
----
----
----
----
----
0.41
2.03
2.44
3.49
0.67
1.85
2.46
2.07
463
340
590
600
460
124
240
210
5.3
7.5
3.5
4.5
----
----
-11
----
---- 2500
---- ±100
3.6
1.4
1.3
39
20
21
37
19
41
54
14
37
55
65
690
510
138
360
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
250
8.0
3.7
5.0
8.0
----
----
----
----
---- mV/°C V
----
2.1
6.5
1.7
1.6
59
30
55
90
V/°C
A/µs
mJ
mJ
µA
nA
nC
nH
nC
ns
ns
pF
ns
V
V
S
V
A
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
V
V
I
I
I
V
V
V
V
I
I
V
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
CC
GE
GE
GE
GE
CC
GE
GE
CE
CE
CE
GE
GE
GE
= 11A
= 11A, V
= 6.5A, V
= 11A
= 18A
= 11A, T
= 8.0A
= 8.0A, T
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 15V
= 0V
= 400V
= 15V, R
= 15V, R
= 30V
= V
= V
= 100V, I
= ±20V
= 0V, I
= 0V, I
= 0V, V
= 0V, V
GE
GE
, I
, I
C
CC
C
J
CC
J
CE
C
C
CE
See Fig.
See Fig.
= 150°C
= 250µA
See Fig.
See Fig.
= 1.0mA
Conditions
G
G
Conditions
= 150°C
C
= 250µA
= 250µA
= 480V
= 480V
= 600V
See Fig. 9, 10, 11, 18
= 600V, T
= 50
= 50
= 11A
15
14
17
16
See Fig. 8
www.irf.com
See Fig. 7
I
di/dt 200A/µs
V
See Fig. 2, 5
See Fig. 13
F
J
GE
V
= 8.0A
= 150°C
R
= 15V
= 200V