IRG4BC20MD-SPBF International Rectifier, IRG4BC20MD-SPBF Datasheet - Page 5

IGBT N-CH W/DIODE 600V 18A D2PAK

IRG4BC20MD-SPBF

Manufacturer Part Number
IRG4BC20MD-SPBF
Description
IGBT N-CH W/DIODE 600V 18A D2PAK
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4BC20MD-SPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 11A
Current - Collector (ic) (max)
18A
Power - Max
60W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Dc Collector Current
18A
Collector Emitter Voltage Vces
2.1V
Power Dissipation Pd
60W
Collector Emitter Voltage V(br)ceo
600V
Collector Emitter Saturation Voltage Vce(sat)
2.1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4BC20MD-SPBF
www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
2.5
2.4
2.3
800
600
400
200
0
Fig. 7 - Typical Capacitance vs.
0
1
Collector-to-Emitter Voltage
V CC = 480V
V GE = 15V
T J = 25°C
I C = 11A
V
CE
10
C ies
C res
C oes

V
C
C
C
R G , Gate Resistance ( )
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
=
=
=
=
0V,
C
C
C
20
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
100
50
100
0.1
10
20
16
12
1
Fig. 10 - Typical Switching Losses vs.
8
4
0
-60 -40 -20
0
V
Fig. 8 - Typical Gate Charge vs.
I
R G = 50
V GE = 15V
V CC = 480V
CC
C
= 400V
= 11A
IRG4BC20MD-S
Gate-to-Emitter Voltage
Junction Temperature
T J , Junction Temperature (°C)
Q , Total Gate Charge (nC)
G
10
0
20
40
20
60
80 100 120 140 160
30
I C = 11A
I C = 22A
I C = 5.5A
5
40

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