IRG4BC30FDPBF International Rectifier, IRG4BC30FDPBF Datasheet
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Manufacturer Part Number
IRG4BC30FDPBF
Description
IGBT W/DIODE 600V 31A TO220AB
Manufacturer
International Rectifier
Specifications of IRG4BC30FDPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 17A
Current - Collector (ic) (max)
31A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
31A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Package
TO-220AB
Circuit
Co-Pack
Switching
Hard
Switching Speed
FAST 1-8 kHz
Vces (v)
600
Ic @ 25c (a)
31
Ic @ 100c (a)
17
Vce(on)@25c Typ (v)
1.59
Vce(on)@25c Max (v)
1.80
Ets Typ (mj)
2.02
Ets Max (mj)
3.9
Qrr Typ Nc 25c
80
Qrr Max Nc 25c
180
Vf Typ
1.40
Pd @25c (w)
100
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4BC30FDPBF
Available stocks
Part Number:
IRG4BC30FDPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
SOFT RECOVERY DIODE
Features
www.irf.com
(1-5 kHz in hard switching, >20kHz in resonant mode).
IGBT co-packaged with HEXFRED
Fast: Optimized for medium operating frequencies
Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
ultra-soft-recovery anti-parallel diodes for use in
Industry standard TO-220AB package
bridge configurations
Lead-Free
θ
θ
θ
θ
TM
ultrafast,
G
n-channel
C
E
TO-220AB
CE(on) typ.
GE
CES
=
C
1
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IRG4BC30FDPBF Summary of contents
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT ...
J ∆ ∆ J Ω Ω www.irf.com ...
0.1 1000 T = 25°C J 100 T = 150° 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE www.irf.com 1 f, Frequency ...
T , Case Temperature (° 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 2 15V V = ...
GE 1600 C ies 1200 800 C oes 400 C res Collector-to-Emitter Voltage ( 480V 15V 25° 17A C 2.10 2.00 ...
Ω 150° 480V 15V GE 6.0 4.0 2.0 0 Collector-to-Emitter Current (A) C 100 10 1 0.4 6 1000 V = 20V ...
V = 200V 125° 25°C J 120 I = 24A 12A 100 di /dt - (A/µs) f 600 V = 200V 125°C J ...
Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on d(on ...
Figure 18e. L 1000V 50V 6000µF 100V Figure 19. www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT D.U. VCC Figure 20. VCC ...
Y6HQG ) UCDTÃDTÃ6IÃDSA Ã GPUÃ8P9 Ã &'( 6TT H7G 9ÃPIÃXXÃ (Ã ((& DIÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" Notes: CC CES GE ≤ ≤ IR WORLD HEADQUARTERS: ...
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