IRG4BC30FDPBF International Rectifier, IRG4BC30FDPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4BC30FDPBF
• Description: IGBT W/DIODE 600V 31A TO220AB
• Manufacturer: International Rectifier

Specifications of IRG4BC30FDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 17A
• Current - Collector (ic) (max): 31A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 31A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 100W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Package: TO-220AB
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: FAST 1-8 kHz
• Vces (v): 600
• Ic @ 25c (a): 31
• Ic @ 100c (a): 17
• Vce(on)@25c Typ (v): 1.59
• Vce(on)@25c Max (v): 1.80
• Ets Typ (mj): 2.02
• Ets Max (mj): 3.9
• Qrr Typ Nc 25c: 80
• Qrr Max Nc 25c: 180
• Vf Typ: 1.40
• Pd @25c (w): 100
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4BC30FDPBF

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1000
100
20
16
12
10
8
4
0
1
0.1
1
V
CE
, Collector-to-Emitter Voltage (V)
60% of rated
voltage
I
T = 25°C
J
T = 150°C
J
V
20µs PULSE WIDTH
GE
= 15V
1
f, Frequency (kHz)
10
A
RMS
1000
100
10
1
5
6
V
T = 150°C
GE
J
10
, Gate-to-Emitter Voltage (V)
7
T = 25°C
J
8
9
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 21W
J
sink
V
5µs PULSE WIDTH
10
CC
= 90°C
= 50V
11
12
3
100
13
A
A