IRG4BC30FDPBF International Rectifier, IRG4BC30FDPBF Datasheet - Page 5
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IRG4BC30FDPBF
Manufacturer Part Number
IRG4BC30FDPBF
Description
IGBT W/DIODE 600V 31A TO220AB
Manufacturer
International Rectifier
Datasheets
1.IRG4BC30FDPBF.pdf
(10 pages)
2.IRG4BC30FDPBF.pdf
(11 pages)
3.IRG4BC30FDPBF.pdf
(11 pages)
Specifications of IRG4BC30FDPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 17A
Current - Collector (ic) (max)
31A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
31A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Package
TO-220AB
Circuit
Co-Pack
Switching
Hard
Switching Speed
FAST 1-8 kHz
Vces (v)
600
Ic @ 25c (a)
31
Ic @ 100c (a)
17
Vce(on)@25c Typ (v)
1.59
Vce(on)@25c Max (v)
1.80
Ets Typ (mj)
2.02
Ets Max (mj)
3.9
Qrr Typ Nc 25c
80
Qrr Max Nc 25c
180
Vf Typ
1.40
Pd @25c (w)
100
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4BC30FDPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4BC30FDPBF
Manufacturer:
XILINX
Quantity:
101
www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
2 0 0 0
1 6 0 0
1 2 0 0
2.20
2.10
2.00
1.90
1.80
8 0 0
4 0 0
0
0
Fig. 7 - Typical Capacitance vs.
1
V
V
T
I
Collector-to-Emitter Voltage
C C
G E
J
C
V
C E
= 17A
= 480V
= 15V
= 25°C
, Collector-to-Emitter Voltage (V)
R , Gate Resistance (
V
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
2 0
G
GE
Resistance
C
C
C
res
= 0V
ies
oes
4 0
1 0
f = 1 MHz
6 0
SHORTED
)
1 0 0
8 0
A
A
0.1
2 0
1 6
1 2
1 0
8
4
0
1
Fig. 10 - Typical Switching Losses vs.
-60
0
V
R
V
V
I
Fig. 8 - Typical Gate Charge vs.
C E
C
G
G E
C C
-40
= 17A
= 400V
= 23
= 15V
= 480V
Gate-to-Emitter Voltage
1 0
-20
Junction Temperature
Q , Total Gate Charge (nC)
T , Junction Temperature (°C)
J
g
0
IRG4BC30FD
2 0
2 0
4 0
3 0
6 0
8 0
4 0
1 0 0 1 2 0 1 4 0 1 6 0
I
I
I
C
C
C
5 0
= 34A
= 17A
= 8.5A
5
6 0
A
A