IRG4BC10UDPBF International Rectifier, IRG4BC10UDPBF Datasheet - Page 4

• Manufacturer Part Number: IRG4BC10UDPBF
• Description: IGBT N-CH DIO 600V 8.5A TO220AB
• Manufacturer: International Rectifier

Specifications of IRG4BC10UDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 5A
• Current - Collector (ic) (max): 8.5A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 8.5A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 38W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4BC10UDPBF

IRG4BC10UD
Fig. 4 - Maximum Collector Current vs. Case
4
0.01
0.1
10
10
0.00001
8
6
4
2
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature (
C
Temperature
75

(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
°
125
t , Rectangular Pulse Duration (sec)
1
C)
0.001
150
Fig. 5 - Typical Collector-to-Emitter Voltage
5.0
4.0
3.0
2.0
1.0
-60 -40 -20

V
80 us PULSE WIDTH
0.01
GE
vs. Junction Temperature

= 15V
Notes:
1. Duty factor D = t / t
2. Peak T = P
T , Junction Temperature ( C)
J
0
J
20
DM
40
x Z
1
0.1
60

thJC
2
P
DM
80 100 120 140 160
+ T

I =

I =

I =
C
C
C
C
t
1
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5.0 A
2.5
t
10
2
5
°
A
A
A
1