IRG4BC10UDPBF International Rectifier, IRG4BC10UDPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4BC10UDPBF
• Description: IGBT N-CH DIO 600V 8.5A TO220AB
• Manufacturer: International Rectifier

Specifications of IRG4BC10UDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 5A
• Current - Collector (ic) (max): 8.5A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 8.5A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 38W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4BC10UDPBF

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Fig. 9 - Typical Switching Losses vs. Gate
0.30
0.25
0.20
500
400
300
200
100
50

0
V
V
T
I
Fig. 7 - Typical Capacitance vs.
J
C
1
CC
GE
Collector-to-Emitter Voltage
= 25 C
= 480V
= 15V
= 5.0A
R
60
V
G
CE
°
R
, Gate Resistance (Ohm)
G

Resistance
V
C
C
C
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
, Gate Resistance (
70
=
=
=
=
0V,
C
C
C

C ies
C oes
C res
ge
gc
ce


+ C
+ C
10
f = 1MHz
80
gc ,
gc
C
ce
90
SHORTED
100
100
0.01
0.1
10
1
20
16
12
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
8
4
0

R
V
V
0

GE
CC
V
G
I
Fig. 8 - Typical Gate Charge vs.
CC
C
= 15V
= 480V
= Ohm
= 400V
= 5.0A
100
T , Junction Temperature ( C )
Gate-to-Emitter Voltage
Junction Temperature
J
Q , Total Gate Charge (nC)
G
0
4
IRG4BC10UD
20
40
8
60
80 100 120 140 160

I =

I =

I =
12
C
C
C
°
5.0A
2.5
10
5
A
A
A
16
5