IRG4PH30KDPBF International Rectifier, IRG4PH30KDPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4PH30KDPBF
• Description: IGBT W/DIODE 1200V 20A TO247AC
• Manufacturer: International Rectifier

Specifications of IRG4PH30KDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 100W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PH30KDPBF

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Fig. 9 - Typical Switching Losses vs. Gate
1200
1000
2.4
2.3
2.2
2.1
2.0
800
600
400
200
0
Fig. 7 - Typical Capacitance vs.
0

1
V
V
T
I
Collector-to-Emitter Voltage
J
C
CC
GE
= 25
R
= 800V
= 15V

= 10A
C
C
C
V
G
R
ies

oes

res
10
CE
G
, Gate Resistance ( Ω )

°
V
C
C
C
Resistance
, Collector-to-Emitter Voltage (V)
, Gate Resistance (Ohm)
C
GE
ies
res
oes
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
100
50
20
15
10
100
0.1
10
5
0
Fig. 10 - Typical Switching Losses vs.
1
0
-60 -40 -20

V
I

R
V
V
Fig. 8 - Typical Gate Charge vs.
R
CC
C
GE
CC
G
G
= 400V
= 10A
= 15V
= 800V
10
Gate-to-Emitter Voltage
= Ohm
= 23
Junction Temperature
Q , Total Gate Charge (nC)
T , Junction Temperature ( C )
J
G
Ω
0
IRG4PH30KD
20
20
40
30
60
80 100 120 140 160
40

I =

I =

I =
C
C
C
°
50
20
10
5
A
A
A
5
60