IRG4PH30KDPBF International Rectifier, IRG4PH30KDPBF Datasheet - Page 7

• Manufacturer Part Number: IRG4PH30KDPBF
• Description: IGBT W/DIODE 1200V 20A TO247AC
• Manufacturer: International Rectifier

Specifications of IRG4PH30KDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 100W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PH30KDPBF

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Fig. 14 - Typical Reverse Recovery vs. di
Fig. 16 - Typical Stored Charge vs. di
1 0 0 0
1 0 0
8 0 0
6 0 0
4 0 0
2 0 0
8 0
6 0
4 0
2 0
0
1 0 0
1 0 0
V = 2 00 V
T = 1 2 5°C
T = 2 5 °C
V = 20 0V
T = 1 2 5°C
T = 2 5 °C
R
J
J
R
J
J
I = 20A
I = 10A
I = 5.0A
F
F
F
di /dt - (A/µ s)
di /dt - (A/µ s)
f
f
I = 20A
I = 10A
I = 5.0A
F
F
F
f
/dt
f
/dt
1 0 0 0
1 0 0 0
Fig. 15 - Typical Recovery Current vs. di
1 0 0 0 0
1 0 0 0
1 0 0
1 0 0
1 0
1 0
1
1 0 0
Fig. 17 - Typical di
1 0 0
I = 20A
I = 10A
I = 5.0A
F
F
F
I = 20A
I = 10A
I = 5.0A
F
F
F
IRG4PH30KD
di /dt - (A/µ s)
di /dt - (A/µ s )
f
f
(rec)M
V = 20 0V
T = 1 2 5°C
T = 2 5 °C
V = 20 0V
T = 12 5 °C
T = 25 °C
/dt vs. di
R
J
J
R
J
J
f
/dt
f
1 0 0 0
/dt
7
1 0 0 0