STGW39NC60VD STMicroelectronics, STGW39NC60VD Datasheet - Page 10

• Manufacturer Part Number: STGW39NC60VD
• Description: IGBT N-CHAN 600V 40A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW39NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 80A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V/1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 250W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5741

Electrical characteristics
10/15
Equation 2
P
with 50% of duty cycle, V
●
Equation 3
P
conditions: V
included in the E
measurements (see note 3).
C
SW
= I
Power dissipation during ON & OFF commutations is due to the switching frequency:
= (E
C
* V
ON
CE(SAT)
+ E
CE
OFF
= 390 V, V
ON
* δ
) * freq.Typical values @ 125 °C for switching losses are used (test
(see note 2), while the tail of the collector current is included in the E
CESAT
GE
= 15 V, R
typical value @125 °C.
G
= 10 Ω). Furthermore, diode recovery energy is
STGW39NC60VD
OFF