STGW39NC60VD STMicroelectronics, STGW39NC60VD Datasheet - Page 8

• Manufacturer Part Number: STGW39NC60VD
• Description: IGBT N-CHAN 600V 40A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW39NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 80A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V/1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 250W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5741

Electrical characteristics
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Figure 8.
Figure 10. Capacitance variations
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
Normalized breakdown voltage vs
temperature
Figure 9.
Figure 11. Switching losses vs temperature
Gate charge vs gate-emitter voltage
current
STGW39NC60VD