IXGT40N60B2 IXYS, IXGT40N60B2 Datasheet
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Manufacturer Part Number
IXGT40N60B2
Description
IGBT 600V 75A TO-268
Specifications of IXGT40N60B2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.7V @ 15V, 30A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
82
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.1
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFAST
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
V
I
I
V
C25
C110
CM
GES
CES
GEM
C
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GES
d
© 2003 IXYS All rights reserved
I
C
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ ≤ 600 V
T
Mounting torque (M3)
TO-247 AD
TO-268 SMD
Test Conditions
V
V
V
I
C
C
C
C
J
J
C
CE
GE
GE
CE
= 250 µA, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
= 30 A, V
CES
TM
VJ
GE
CE
GE
= 125°C, R
= ±20 V
= V
= 15 V
IGBT
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
(T
J
J
J
= 25°C
= 150°C
= 25°C
J
= 25°C, unless otherwise specified)
Advance Technical Data
IXGH 40N60B2
IXGT 40N60B2
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
I
1.13/10 Nm/lb.in.
CM
200
600
600
±20
±30
= 80
300
150
300
75
40
max.
±100
5.0
6
4
1.7
50
1
V
mA
nA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
g
V
TO-268
TO-247 AD
G = Gate,
E = Emitter,
Features
Applications
(IXGT)
(IXGH)
Medium frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
V
I
V
t
C25
fi typ
CE(sat)
CES
G
C
G
E
C = Collector,
TAB = Collector
= 600 V
=
<
=
E
DS99049A(11/03)
1.7 V
75 A
82 ns
C (TAB)
C (TAB)
Related parts for IXGT40N60B2
IXGT40N60B2 Summary of contents
... GE(th CES CE CES ±20 V GES CE(sat © 2003 IXYS All rights reserved Advance Technical Data IXGH 40N60B2 IXGT 40N60B2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 200 = 10 Ω 300 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... R thJC R (TO-247) thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...
... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4 3 60A 3 C 30A 15A 2 Volts G E © 2003 IXYS All rights reserved Fig. 2. Extended Output Characte ristics 210 9V 180 150 7V 120 2.5 3 1.4 9V 1.3 1.2 7V 1.1 1.0 0.9 0.8 5V 0.7 ...
... 60A 200 C 150 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 120 150 180 c 2.7 2 ...
... Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 1 © 2003 IXYS All rights reserved 15A 105 115 125 C ies C oes C res Fig. 16. Maxim um Trans ient Therm al Res istance 10 Pulse Width - milliseconds ...
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