IXGT40N60B2 IXYS, IXGT40N60B2 Datasheet - Page 5

• Manufacturer Part Number: IXGT40N60B2
• Description: IGBT 600V 75A TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT40N60B2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 82
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.1
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10000
1000
275
250
225
200
175
150
125
100
100
0.45
0.35
0.25
0.15
0.05
75
10
0.4
0.3
0.2
0.1
25
0
1
t
t
R
V
V
35
Sw itching Tim e on Te m perature
d(off)
fi
Fig. 13. Dependence of Turn-Off
GE
CE
G
f = 1 MHz
-
5
= 3.3Ω
= 400V
= 15V
- - - - -
I
C
45
Fig. 15. Capacitance
= 60A
T
10
J
55
- Degrees Centigrade
15
65
V
C E
75
20
- Volts
I
C
= 30A
85
Fig. 16. Maxim um Trans ient Therm al Res istance
25
95
C
C
C
30
105 115 125
ies
oes
res
I
10
C
= 15A
35
Pulse Width - milliseconds
40
15
12
9
6
3
0
0
10
V
I
I
C
G
CE
= 30A
= 10mA
= 300V
20
100
Fig. 14. Gate Charge
30
Q
G
- nanoCoulombs
40
50
IXGH 40N60B2
IXGT 40N60B2
60
70
80
90
1000
100