STGW35NB60SD STMicroelectronics, STGW35NB60SD Datasheet - Page 10
![MOSFET N-CHAN 35A 600V TO-247](/photos/5/30/53058/to-247_sml.jpg)
STGW35NB60SD
Manufacturer Part Number
STGW35NB60SD
Description
MOSFET N-CHAN 35A 600V TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STGW35NB60S.pdf
(13 pages)
Specifications of STGW35NB60SD
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.7V @ 15V, 20A
Current - Collector (ic) (max)
70A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Type
IGBT
Dc Collector Current
70A
Collector Emitter Voltage Vces
1.7V
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STGW35NB60SD
Manufacturer:
ST
Quantity:
12 500
4 Package mechanical data
4
10/13
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
STGW35NB60SD