STGW35NB60SD STMicroelectronics, STGW35NB60SD Datasheet - Page 2

• Manufacturer Part Number: STGW35NB60SD
• Description: MOSFET N-CHAN 35A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW35NB60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 20A
• Current - Collector (ic) (max): 70A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 1.7V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

1 Electrical ratings
1
Table 1.
Table 2.
2/13
I
Rthj-case
Rthj-case
CM
Rthj-amb
I
I
Symbol
C
C
V
P
Note
Note
V
T
Note
T
CES
TOT
T
GE
I
stg
f
L
j
4
4
Electrical ratings
1
Thermal resistance
Absolute maximum ratings
Collector-Emitter Voltage (V
Collector Current (continuous) at 25°C
Collector Current (continuous) at 100°C
Collector Current (pulsed)
Gate-Emitter Voltage
Diode RMS Forward Current at T
Total Dissipation at T
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering
Purpose (1.6mm from case, for 10sec.)
Thermal Resistance Junction-case (IGBT)
Thermal Resistance Junction-case (DIODE)
Thermal Resistance Junction-ambient
Parameter
C
= 25°C
GS
= 0)
C
= 25°C
Min.
--
--
--
– 55 to 150
Value
± 20
600
250
200
300
Typ.
70
35
30
--
--
--
STGW35NB60SD
0.625
Max.
1.5
50
°C/W
°C/W
°C/W
Unit
Unit
°C
°C
W
V
A
A
A
V
A