IRG4PC50FDPBF International Rectifier, IRG4PC50FDPBF Datasheet
IRG4PC50FDPBF
Manufacturer Part Number
IRG4PC50FDPBF
Description
IGBT W/DIODE 600V 70A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr
Datasheets
1.IRG4PC50FD-EPBF.pdf
(11 pages)
2.IRG4PC50FDPBF.pdf
(3 pages)
3.IRG4PC50FDPBF.pdf
(11 pages)
Specifications of IRG4PC50FDPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.6V @ 15V, 39A
Current - Collector (ic) (max)
70A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
4100 pF
Current, Collector
70 A
Energy Rating
3.9 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction To Case
0.64 °C/W
Speed, Switching
1 to 5 kHz (Hard Switching), >20 kHz (Resonant Mode)
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
1.79 V
Transistor Type
IGBT
Dc Collector Current
70A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4PC50FDPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4PC50FDPBF
Manufacturer:
IXYS
Quantity:
6 000
Features
Features
Features
Features
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Generation -4 IGBT's offer highest efficiencies
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
• Designed to be a "drop-in" replacement for equivalent
www.irf.com
• Fast: Optimized for medium operating
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-247AC package
R
R
R
R
Wt
V
I
I
I
I
I
I
V
P
P
T
T
LM
FM
IGBT's . Minimized recovery characteristics require
C
C
CM
F
kHz in resonant mode).
parameter distribution and higher efficiency than
Generation 3
available
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
industry-standard Generation 3 IR IGBT's
STG
less/no snubbing
CES
GE
D
D
J
frequencies ( 1-5 kHz in hard switching, >20
@ T
JA
@ T
@ T
JC
JC
CS
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Parameter
Parameter
TM
ultrafast,
G
n-cha nn el
Min.
------
------
------
------
-----
300 (0.063 in. (1.6mm) from case)
IRG4PC50FD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
Max.
6 (0.21)
TO-247AC
± 20
600
280
280
280
200
Typ.
------
------
70
39
25
78
0.24
-----
Fast CoPack IGBT
@V
V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
0.64
0.83
------
------
40
= 600V
PD 91469B
C
1.45V
= 39A
12/30/00
Units
Units
g (oz)
°C/W
°C
W
V
A
V
1
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IRG4PC50FDPBF Summary of contents
Page 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter ...
Page 2
IRG4PC50FD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ...
Page 3
Fig Typical Load Current vs. Frequency ...
Page 4
IRG4PC50FD ase Tem perature (°C) C Fig Maximum Collector Current vs. ...
Page 5
MHz GE Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc ies oes 2 ...
Page 6
IRG4PC50FD 5 150° 480V 15V Collector-to-Emitter Current ( Fig. 11 ...
Page 7
° ° 50A 25A ...
Page 8
IRG4PC50FD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) ...
Page 9
µ www.irf.com ...
Page 10
IRG4PC50FD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor T Pulse width 5.0µs, single shot. 1 ...
Page 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...