IRG4PC50FDPBF International Rectifier, IRG4PC50FDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PC50FDPBF
• Description: IGBT W/DIODE 600V 70A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PC50FDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 39A
• Current - Collector (ic) (max): 70A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 4100 pF
• Current, Collector: 70 A
• Energy Rating: 3.9 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 200 W
• Resistance, Thermal, Junction To Case: 0.64 °C/W
• Speed, Switching: 1 to 5 kHz (Hard Switching), >20 kHz (Resonant Mode)
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 1.79 V
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PC50FDPBF

IRG4PC50FD
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
GES
CES
d(on)
d(off)
f
d(on)
d(off)
f
r
r
rr
rr
V
fe
E
V
on
off
ts
(BR)CES
CE(on)
GE(th)
oes
FM
g
ts
ies
res
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Gate - Emitter Charge (turn-on)
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
----
----
----
3.0
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
---- 4100 ----
----
----
----
----
----
----
----
----
----
----
----
21
0.62
1.45
1.79
1.53
190
240
140
400
260
250
105
112
420 1200
250
160
---- 6500
---- ±100
-14
1.3
1.2
1.5
2.4
3.9
6.5
4.5
8.0
----
----
----
30
28
65
55
25
59
27
13
49
50
250
290
360
210
160
375
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
1.6
6.0
1.7
1.5
5.0
----
---- mV/°C V
42
97
75
10
15
V/°C
A/µs T
nA
µA
nC
mJ
mJ
nH
nC
V
V
ns
ns
pF
ns
V
S
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 70A
= 39A, T
= 25A
= 25A, T
= 39A
= 39A
= 25°C
= 39A, V
= 39A, V
= 150°C,
= 25°C See Fig.
= 125°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= 400V
= 15V
= 15V, R
= 15V, R
= ±20V
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
= 150°C
C
C
= 150°C
See Fig.
See Fig.
See Fig.
Conditions
Conditions
= 250µA
= 1.0mA
G
G
C
= 250µA
= 250µA
= 480V
See Fig. 9, 10, 11, 18
= 480V
= 600V
= 600V, T
= 5.0
= 5.0
= 39A
14
15
17
16
See Fig. 8
See Fig. 7
See Fig. 2, 5
See Fig. 13
di/dt 200A/µs
www.irf.com
V
V
J
I
GE
R
F
= 150°C
= 25A
= 200V
= 15V