IXGT20N120BD1 IXYS, IXGT20N120BD1 Datasheet - Page 5

• Manufacturer Part Number: IXGT20N120BD1
• Description: IGBT 1200V FRD TO-268
• Manufacturer: IXYS

Specifications of IXGT20N120BD1

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Fig. 13. Forward current I
Fig. 16. Dynamic parameters Q
Fig. 19. Transient thermal resistance junction to case
Z
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I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
70
60
50
40
30
20
10
A
0
1
0
0
T
T
T
VJ
VJ
VJ
versus T
=150°C
=100°C
= 25°C
40
1
I
RM
Q
r
VJ
0.0001
80
2
T
VJ
F
V
120
versus V
F
3
°C
V
r
, I
0.001
160
RM
4
F
t
Q
rr
Fig. 14. Reverse recovery charge Q
Fig. 17. Recovery time t
r
220
200
180
160
140
120
µC
ns
5
4
3
2
1
0
100
0.01
0
T
V
VJ
R
versus -di
200
= 100°C
= 600V
I
I
I
F
F
F
= 60A
= 30A
= 15A
400
I
I
I
F
F
F
F
0.1
/dt
= 60A
= 30A
= 15A
-di
600
DSEP 30-12A/DSEC 60-12A
F
-di
/dt
T
V
rr
t
F
VJ
R
/dt
versus -di
= 100°C
= 600V
A/µs
s
800
A/µs
1000
1000
1
F
/dt
r
I
V
RM
FR
120
Fig. 15. Peak reverse current I
Constants for Z
Fig. 18. Peak forward voltage V
60
50
40
30
20
10
80
40
A
V
0
0
1
2
3
i
0
0
t
fr
T
V
I
I
I
VJ
R
F
F
F
= 60A
= 30A
= 15A
= 100°C
= 600V
200
200
versus -di
t
fr
versus di
R
0.465
0.179
0.256
thi
400
400
IXGH 20N120BD1
IXGT 20N120BD1
thJC
(K/W)
calculation:
F
F
600
/dt
600
/dt
di
-di
T
I
V
F
F
VJ
FR
/dt
F
/dt
= 100°C
= 30A
A/µs
A/µs
800
800
t
0.0052
0.0003
0.0397
i
(s)
RM
1000
1000
FR
µs
1.2
0.8
0.4
0.0
and
t
fr