IXGT28N120B IXYS, IXGT28N120B Datasheet - Page 4

• Manufacturer Part Number: IXGT28N120B
• Description: IGBT 1200V 40A TO-268(D3)
• Manufacturer: IXYS

Specifications of IXGT28N120B

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 28A
• Current - Collector (ic) (max): 50A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-268
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 50
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 28
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 160
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5
• Rthjc, Max, Igbt, (°c/w): 0.5
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1400
1200
1000
800
600
400
200
35
30
25
20
15
10
10
5
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
I
J
C
R
V
t
t
T
V
V
= -40
10
15
V
Fig. 11. Dependence of Turn-off
d(off)
fi
10
125
J
= 14A
Fig. 9. Dependence of Turn-Off
CE
GE
CE
G
GE
25
Fig. 7. Trans conductance
= 125ºC
- - - - - -
= 5Ω
º
= 960V
= 15V
= 960V
º
º
20
= 15V
20
C
20
C
C
Sw itching Tim e on R
Energy Los s on I
30
25
30
I
I
C
R
40
C
30
40
- Amperes
G
- Amperes
- Ohms
50
35
50
T
J
I
4,850,072
4,835,592
C
60
= 125
40
60
= 28A
T
70
C
45
70
º
J
C
= 25
G
4,931,844
4,881,106
80
80
50
º
C
I
C
90
55
90
= 56A
5,034,796
5,017,508
100
100
60
5,049,961
5,063,307
450
400
350
300
250
200
150
100
18
16
14
12
10
11
10
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
5,237,481
5,187,117
25
10
0
T
V
V
T
R
V
Fig. 12. Depe ndence of Turn-off
10
35
15
J
Fig. 10. De pende nce of Turn-off
GE
CE
V
Fig. 8. Dependence of Turn-off
J
CE
Ene rgy Loss on Tem pe rature
G
= 125
GE
= 25
5,381,025
5,486,715
= 5Ω
= 15V
= 960V
= 960V
20
45
20
= 15V
Sw itching Tim e on I
º
º
T
C
Ene rgy Loss on R
C
J
30
55
25
- Degrees Centigrade
T
6,306,728B1
6,404,065B1
J
I
R
= 125
C
40
65
30
- Amperes
G
- Ohms
º
IXGH 28N120B
IXGT 28N120B
50
75
C
35
6,162,665
6,259,123B1 6,306,728B1 6,683,344
60
85
40
I
I
t
t
R
V
V
C
I
C
70
95
d(off)
fi
C
45
G
GE
CE
G
I
= 56A
= 14A
C
C
= 28A
6,534,343
I
I
- - - - - -
= 5Ω
C
C
= 15V
= 960V
= 56A
105 115 125
= 14A
80
= 28A
50
90
55
6,583,505
100
60