IXGT28N120B IXYS, IXGT28N120B Datasheet - Page 5

• Manufacturer Part Number: IXGT28N120B
• Description: IGBT 1200V 40A TO-268(D3)
• Manufacturer: IXYS

Specifications of IXGT28N120B

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 28A
• Current - Collector (ic) (max): 50A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-268
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 50
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 28
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 160
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5
• Rthjc, Max, Igbt, (°c/w): 0.5
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10000
1000
450
400
350
300
250
200
150
100
100
0.50
1.00
0.10
10
25
0
1
t
t
R
V
V
Sw itching Tim e on Tem perature
d(off)
fi
35
Fig. 13. Dependence of Turn-off
GE
CE
G
5
- - - - - -
f = 1 MHz
= 5Ω
= 15V
= 960V
45
Fig. 15. Capacitance
T
10
J
55
- Degrees Centigrade
I
C
15
V
65
I
= 14A
C
C E
= 56A
75
20
- Volts
I
C
= 56A
85
Fig. 17. Maxim um Transient Therm al Resistance
25
I
C
95
= 14A
30
I
C
C
C
C
105 115 125
oes
res
10
ies
= 28A
35
Pulse Width - milliseconds
40
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
100
0
10
V
I
I
T
R
dV/dT < 10V/ns
C
G
CE
J
Fig. 16. Reverse-Bias Safe
G
300
= 28A
= 1 0mA
= 125
= 5Ω
= 600V
20
100
Fig. 14. Gate Charge
Operating Area
º
Q
C
30
500
G
- nanoCoulombs
V
40
C E
700
50
- Volts
IXGH 28N120B
IXGT 28N120B
60
900
70
80
1100
90
1300
1000
100