IXDA20N120AS IXYS, IXDA20N120AS Datasheet - Page 3

• Manufacturer Part Number: IXDA20N120AS
• Description: IGBT 1200V 34A TO-263AB
• Manufacturer: IXYS

Specifications of IXDA20N120AS

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector (ic) (max): 34A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 38A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 38
• Ic90, Tc=90°c, Igbt, (a): 25
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3
• Tfi, Typ, Igbt, (ns): 70
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.4
• Rthjc, Max, Igbt, (°c/w): 0.63
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-263 (D2 PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
I
V
I
C
C
GE
40
35
30
25
20
15
10
40
35
30
25
20
15
10
20
15
10
A
A
V
5
0
5
0
5
0
0
5
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
V
I
Fig. 4 Typ. turn on gate charge
C
T
V
T
CE
J
CE
J
= 25°C
= 25°C
= 600V
= 25A
10
= 20V
6
20
1
7
30
8
40
2
50
9
V
V
60
CE
GE
10
Q
3
G
70
V
GE
11
=17V
V
80
V
13V
11V
15V
9V
nC
4
I
F
I
RM
I
C
A
40
35
30
25
20
15
10
40
35
30
25
20
15
10
30
20
10
A
A
5
0
5
0
0
1.0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics of
Fig. 6 Typ. turn off characteristics of
T
J
= 125°C
t
I
rr
RM
1
1.5
free wheeling diode
free wheeling diode
100
T
2
IXDA 20N120 AS
J
2.0
= 125°C
200
3
2.5
-di/dt
V
V
CE
F
300
V
GE
=17V
4
T
V
I
F
IXDH20N120AU1
T
J
R
J
A/
= 125°C
= 20A
= 600V
= 25°C
3.0
m
V
s
15V
11V
13V
9V
V
400
5
900
600
300
0
ns
3 - 4
t
rr