IXGT28N120BD1 IXYS, IXGT28N120BD1 Datasheet

IGBT 1200V 40A FRD TO-268(D3)

IXGT28N120BD1

Manufacturer Part Number
IXGT28N120BD1
Description
IGBT 1200V 40A FRD TO-268(D3)
Manufacturer
IXYS
Datasheets

Specifications of IXGT28N120BD1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 28A
Current - Collector (ic) (max)
50A
Power - Max
250W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
50A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-268
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
170
Eoff, Typ, Tj=125°c, Igbt, (mj)
4.6
Rthjc, Max, Igbt, (°c/w)
0.5
If, Tj=110°c, Diode, (a)
10
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Voltage IGBT
w/ Diode
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C100
F90
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque (TO-247)
TO-247
TO-286
I
V
V
I
Test Conditions
C
C
J
J
C
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C ( Chip Capability )
= 100°C
= 90°C
= 25°C, 1ms
= 15V, T
= 25°C
= 250μA, V
= V
= 0V, V
= 28A, V
CES
, V
J
GE
= 125°C, R
GE
GE
= ±20V
= 0V
CE
= 15V, Note 2
= V
GE
GE
G
T
= 1MΩ
J
= 5Ω
= 125°C, Note1
T
J
= 125°C
IXGH28N120BD1
IXGT28N120BD1
Characteristic Values
Min.
2.5
-55 ... +150
-55 ... +150
0.8 • V
Maximum Ratings
I
CM
1.13/10
= 120
1200
1200
300
Typ.
±20
±30
150
250
150
260
CES
2.9
2.8
50
28
10
6
4
±100
250
Max.
Nm/lb.in.
5.0
3.5
50
μA
μA
°C
°C
°C
°C
nA
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
g
g
V
I
V
t
TO-247AD (IXGH)
TO-268 (IXGT)
G = Gate
E = Emitter
Features
Advantages
Applications
C25
fi(typ)
International Standard Packages
JEDEC TO-247AD & TO-268
IGBT and Anti-Parallel FRED for
Resonant Power Supplies
- Induction Heating
- Rice Cookers
MOS Gate Turn-On
Fast Recovery Expitaxial Diode (FRED)
- Soft Recovery with Low I
Saves Space (Two Devices in One
Package)
Easy to Mount with 1 Screw
(Isolated Mounting Screw Hole)
Reduces Assembly Time and Cost
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
DC Choppers
AC Motor Speed Drives
DC Servo and Robot Drives
CES
CE(sat)
G
≤ ≤ ≤ ≤ ≤ 3.5V
= 1200V
= 50A
= 170ns
C
E
G
C
TAB = Collector
E
= Collector
C (TAB)
DS98988G(08/09)
(TAB)
RM

Related parts for IXGT28N120BD1

IXGT28N120BD1 Summary of contents

Page 1

... GE(th CES CE CES 0V ±20V GES 28A 15V, Note 2 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved IXGH28N120BD1 IXGT28N120BD1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ± 150 = 5Ω 120 G CM 0.8 • V CES 250 -55 ... +150 150 -55 ... +150 300 260 1.13/ Characteristic Values Min ...

Page 2

... Characteristic Values Min. Typ 100°C 2 120 = 30V 40 R measurement. CES (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH28N120BD1 IXGT28N120BD1 TO-247 (IXGH) Outline Max Terminals Gate 3 - Source 280 ns Dim. Millimeter 320 ns Min. 5 4.7 A 2.2 1 ...

Page 3

... IXYS CORPORATION, All Rights Reserved º 3.5 4 4.5 5 º C 13V 11V 3.5 4 4.5 5 º IXGH28N120BD1 IXGT28N120BD1 Fig. 2. Exte nde d Output Characte ris tics º 240 V = 17V GE 210 180 150 120 Volts C E Fig nde nce rature 1 15V GE 1.3 1.2 1 ...

Page 4

... R - Ohms G IXYS reserves the right to change limits, test conditions and dimensions 100 C º 125 C J º 56A I = 28A 100 IXGH28N120BD1 IXGT28N120BD1 Fig. 8. Dependence of Turn-off Energy Loss º 125 15V 960V Ohms G Fig. 10. Depende nce of Turn-off Energy Loss on Tem perature 5Ω 15V ...

Page 5

... IXYS CORPORATION, All Rights Reserved I = 56A 28A 14A 105 115 125 C ies C oes C res Fig. 17. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH28N120BD1 IXGT28N120BD1 Fig. 14. Gate Charge 600V 28A 0mA nanoCoulombs G Fig. 16. Reverse-Bias Safe Operating Area ...

Page 6

... 140 t rr 130 I = 20A F 120 I = 10A 110 100 90 160 0 200 400 600 -di /dt F Fig. 22. Recovery time t versus -di rr 0.01 0.1 IXGH28N120BD1 IXGT28N120BD1 100° 600V 20A 10A A/μs 1000 0 200 400 /dt F Fig. 20. Peak reverse current I r versus -di 120 = 100°C ...

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