IXGT28N120BD1 IXYS, IXGT28N120BD1 Datasheet - Page 2

• Manufacturer Part Number: IXGT28N120BD1
• Description: IGBT 1200V 40A FRD TO-268(D3)
• Manufacturer: IXYS

Specifications of IXGT28N120BD1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 28A
• Current - Collector (ic) (max): 50A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-268
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 50
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 170
• Eoff, Typ, Tj=125°c, Igbt, (mj): 4.6
• Rthjc, Max, Igbt, (°c/w): 0.5
• If, Tj=110°c, Diode, (a): 10
• Rthjc, Max, Diode, (ºc/w): 2.5
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
(T
V
I
t
t
R
Notes:
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
rr
fs
off
on
off
F
ies
oes
res
thJC
thCK
thJC
g
ge
gc
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Part must be heatsunk for high-temp I
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3. Switching times & energy loses may increase for higher V
I
V
I
Inductive load, T
I
V
Note 3
Inductive load, T
I
V
Note 3
(TO-247)
I
-di
I
Test Conditions
Test Conditions
I
C
C
C
C
F
F
F
CE
CE
CE
= 10A, V
= 10A, V
= 1A, V
= 28A, V
= 28A, V
= 28A, V
F
= 28A, V
/dt = 400A/μs, V
= 25V, V
= 0.8 • V
= 0.8 • V
GE
GE
GE
GE
GE
GE
CE
= 0V, -di
GE
CES
CES
= 0V, Note 2
= 0V,
= 15V, V
= 15V
= 15V
= 10V, Note 2
= 0V, f = 1MHz
, R
, R
4,835,592
4,881,106
J
J
G
G
= 25°C
= 125°C
R
= 5Ω
= 5Ω
F
= 600V
/dt = 100A/μs, V
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
T
J
= 100°C
CES
5,049,961
5,063,307
5,187,117
CES
R
measurement.
= 30V
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
Min.
Characteristic Values
15
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
Typ.
2.3
1700
120
CE
14
0.21
130
210
170
250
340
40
2.2
1.4
4.6
(Clamp), T
23
45
92
13
35
30
20
35
28
2.5
Max.
0.50 °C/W
Max.
280
320
3.2
6,404,065 B1
6,534,343
6,583,505
5.0
J
or R
°C/W
°C/W
mJ
mJ
nC
nC
nC
mJ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXGT) Outline
TO-247 (IXGH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXGH28N120BD1
IXGT28N120BD1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Tab - Drain
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216