IRG4PH40UD-EPBF International Rectifier, IRG4PH40UD-EPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PH40UD-EPBF
• Description: IGBT W/DIODE 1200V 41A TO247-3
• Manufacturer: International Rectifier

Specifications of IRG4PH40UD-EPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 21A
• Current - Collector (ic) (max): 41A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PH40UD-EPBF

IRG4PH40UDPbF
Switching Characteristics @ T
Electrical Characteristics @ T
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
V
∆V
V
V
∆V
g
I
V
I
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
CES
GES
E
on
off
ts
ts
fe
ies
oes
res
(BR)CES
CE(on)
GE(th)
FM
g
gc
rr
(rec)M
(BR)CES
GE(th)
2
/dt
/∆T
/∆T
J
J
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
1200
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
16
—
—
—
—
—
—
—
—
—
—
1800
1.80
1.93
3.73
7.04
0.43
2.43
2.97
2.47
240
240
510
120
106
140
335
133
4.5
6.2
-11
2.6
2.4
86
13
29
46
35
97
42
32
13
18
63
85
24
—
—
—
—
—
5000
±100
130
150
360
160
380
880
250
4.6
8.0
3.1
6.0
3.3
3.1
20
44
95
11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
mJ
mJ
µA
nA
nC
nH
nC
pF
ns
ns
ns
V
V
S
V
A
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
V
V
I
I
I
V
V
V
V
I
I
V
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
CC
GE
GE
GE
GE
CC
GE
GE
CE
CE
CE
GE
GE
GE
= 21A
= 21A, V
= 21A, V
= 125°C
= 125°C
= 125°C
= 21A
= 41A
= 21A, T
= 8.0A
= 8.0A, T
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= ±20V
GE
GE
, I
, I
CC
CC
J
C
C
J
CE
CE
See Fig.
See Fig.
C
C
Conditions
= 150°C
Conditions
See Fig.
See Fig.
= 250µA
= 1.0mA
= 125°C
G
G
C
= 800V
= 800V
= 250µA
= 250µA
See Fig. 11, 18
= 600V, T
= 10Ω
= 10Ω
= 600V
= 21A
15
14
17
16
See Fig. 8
See Fig. 7
www.irf.com
di/dt = 200A/µs
V
See Fig. 2, 5
See Fig. 13
V
J
GE
I
R
= 150°C
F
= 200V
= 8.0A
= 15V