IRG4PH40UD-EPBF International Rectifier, IRG4PH40UD-EPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4PH40UD-EPBF
• Description: IGBT W/DIODE 1200V 41A TO247-3
• Manufacturer: International Rectifier

Specifications of IRG4PH40UD-EPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 21A
• Current - Collector (ic) (max): 41A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PH40UD-EPBF

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Fig. 9 - Typical Switching Losses vs. Gate
5.0
4.5
4.0
3.5
3.0
4000
3000
2000
1000
0
0

V
V
T
I
Fig. 7 - Typical Capacitance vs.
J
C
CC
GE
1
Collector-to-Emitter Voltage
= 800V
= 15V
= 25 C
= 21A
R
10
V
R
G
CE
°
G
, Gate Resistance (Ohm)
, Gate Resistance ( Ω )

V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes

C res
C oes
C ies
=
=
=
=
20


0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
40
SHORTED
50
100
100
10
1
20
16
12
-60 -40 -20
8
4
0
Fig. 10 - Typical Switching Losses vs.

R
V
V
0

GE
CC
V
G
I
Fig. 8 - Typical Gate Charge vs.
CC
C
IRG4PH40UDPbF
= 15V
= 800V
= Ohm
= 400V
= 21A
10
T , Junction Temperature ( C )
Gate-to-Emitter Voltage
Junction Temperature
J
20
Q , Total Gate Charge (nC)
Ω
G
0
20
40
40
60
60
80 100 120 140 160

I =

I =

I =
C
C
C
°
80
10.5
42
21
A
A
A
5
100