IXGH32N60B IXYS, IXGH32N60B Datasheet - Page 2

• Manufacturer Part Number: IXGH32N60B
• Description: IGBT HIPERFAST 600V 60A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH32N60B

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 32A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 64
• Ic90, Tc=90°c, Igbt, (a): 32
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 85
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
V
I
t
R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
RM
d(on)
d(off)
fi
d(on)
d(off)
fi
ri
ri
rr
fs
off
off
on
F
ies
G
thJC
thCK
thJC
oes
res
GE
GC
I
Pulse test, t 300 s, duty cycle d 2 % T
I
V
I
F
F
F
R
= I
= I
= 1 A; -di/dt = 100 A/ s; V
= 360 V
Test Conditions
I
Pulse test, t
Test Conditions
C90
C90
C
Inductive load, T
I
V
Remarks: Switching times may increase for
V
increased R
Inductive load, T
I
V
Remarks: Switching times may
increase for V
higher T
= I
C
C
, V
, V
CE
CE
CE
C90
V
I
TO-247
C
GE
GE
(Clamp) > 0.8 • V
CE
= I
= I
= 0.8 V
= 0.8 V
; V
= 0 V,
= 0 V, -di
= 25 V, V
C90
C90
= I
CE
J
C90
, V
, V
or increased R
= 10 V,
G
, V
CES
CES
GE
GE
300 s, duty cycle
CE
= 15 V
= 15 V
GE
, R
, R
F
/dt = 100 A/ s
GE
(Clamp) > 0.8 • V
= 15 V, V
J
G
J
G
= 0 V, f = 1 MHz
= 25 C
= 125 C
= R
= R
CES
R
off
off
= 30 V
, higher T
= 4.7
= 4.7
G
CE
= 0.5 V
(T
(T
J
J
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
2 %
J
CES
or
32N60BD1
32N60BD1
T
T
T
CES
,
J
J
J
J
32N60B
32N60B
= 125 C
= 25 C
= 150 C
= 25 C
min.
min.
Characteristic Values
15
Characteristic Values
4,835,592
4,850,072
2700
0.25
typ.
100
typ.
210
240
110
100
120
120
0.6
0.3
1.0
1.2
25
25
50
23
40
25
20
80
25
25
6
4,881,106
4,931,844
max.
max.
IXGH 32N60B IXGH 32N60BD1
IXGT 32N60B
0.62 K/W
150 nC
200
150
1.6
2.5
1.0 K/W
1.2 mJ
35 nC
75 nC
K/W
5,017,508
5,034,796
mJ
mJ
mJ
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
A
S
TO-247 AD (IXGH) Outline
TO-268AA (D
5,049,961
5,063,307
Dim.
Dim.
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
A
B
C
D
E
F
G
H
J
K
L
M
N
2
1
1
2
13.80
15.85
18.70
19.81 20.32 0.780
20.80 21.46 0.819
15.75 16.26 0.610
Min. Max.
Min.
1.15
13.3
2.40
1.20
1.00
3.80
IXGT 32N60BD1
Millimeter
3.55
4.32
1.65
10.8
4.9
2.7
.02
1.9
Millimeter
5.4
1.0
4.7
0.4
1.5
5.45 BSC
0.25 BSC
5,187,117
5,237,481
.4
3
-
PAK)
14.00
16.05
19.10
3.65 0.140
5.49 0.170
2.13 0.065
11.0 0.426
2.49 0.087
Max.
1.45
13.6
2.70
1.40
1.15
4.10
6.2 0.212
4.5 -
1.4 0.040
5.3 0.185
0.8 0.016
5.1
2.9
.25
2.1
.65
5,486,715
5,381,025
Min.
Min. Max.
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Inches
.75
Inches
.215 BSC
.010 BSC
Max.
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
.201
.114
.010
.057
.026
.551
.632
.535
.752
.106
.055
.045
.161
.83
6,306,728B1