IXGH32N60B IXYS, IXGH32N60B Datasheet - Page 4

• Manufacturer Part Number: IXGH32N60B
• Description: IGBT HIPERFAST 600V 60A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH32N60B

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 32A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 64
• Ic90, Tc=90°c, Igbt, (a): 32
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 85
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
0.001
0.01
2.5
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
15
12
9
6
3
0
1
0
0
Fig. 9. Gate Charge
D=0.05
D=0.02
D=0.5
D=0.2
D=0.1
D=0.01
Fig. 7. Dependence of tfi and E
Single pulse
V
I
CE
C
= 32A
25
= 300V
R
T
J
G
= 125°C
20
= 10Ω
Q
50
g
- nanocoulombs
I
C
- Amperes
0.0001
75
40
E
(ON)
E
100
(OFF)
60
125
Fig. 11. Transient Thermal Resistance
OFF
D = Duty Cycle
150
on I
0.001
80
Pulse Width - Seconds
5
4
3
2
1
0
C
.
4,835,592
4,850,072
4,881,106
4,931,844
IXGH 32N60B IXGH 32N60BD1
IXGT 32N60B
100
0.1
2.5
2.0
1.5
1.0
0.5
0.0
10
0.01
1
0
0
Fig. 8. Dependence of tfi and E
Fig. 10. Turn-off Safe Operating Area
5,017,508
5,034,796
T
100
J
I
10
C
= 125°C
= 32A
200
T
R
dV/dt < 5V/ns
5,049,961
5,063,307
20
J
G
= 125°C
= 4.7Ω
R
V
G
CE
0.1
- Ohms
300
30
- Volts
IXGT 32N60BD1
5,187,117
5,237,481
400
40
E
E
(ON)
(OFF)
500
50
5,486,715
5,381,025
OFF
on R
600
60
1
6,306,728B1
5
4
3
2
1
0
G
.