IXGH25N160 IXYS, IXGH25N160 Datasheet - Page 2

• Manufacturer Part Number: IXGH25N160
• Description: IGBT 1600V 75A TO-247
• Manufacturer: IXYS

Specifications of IXGH25N160

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1600V
• Vce(on) (max) @ Vge, Ic: 4.7V @ 20V, 100A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.6kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 35
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): 20
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
I
C
C
C
Q
Q
Q
t
t
t
t
R
R
Notes: 1.
TO-268: Minimum Recommended Footprint
IXYS MOSFETs and IGBTs are covered by 4,835,592
IXYS reserves the right to change limits, test conditions, and dimensions.
C(ON)
d(on)
ri
d(off)
fi
one or moreof the following U.S. patents:
fs
ies
oes
res
thJC
thCK
g
ge
gc
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a subjective
pre-production design evaluation. Ixys reserves the right to change limits, test conditions,
and dimensions without notice.
Pulse test, t < 300 μs, duty cycle < 2 %
Test Conditions
I
V
I
(TO-247)
Resistive load
I
V
C
V
C
C
CE
CE
= 50 A; V
GE
= 50 A, V
= 100 A, V
PRELIMINARY TECHNICAL INFORMATION
= 25 V, V
= 1200 V, R
= 15V, V
CE
GE
GE
GE
= 10 V, Note 1
= 15 V, V
CE
= 0 V, f = 1 MHz
= 15 V, Note 1
4,850,072
4,881,106
G
= 10V, Note 1
= 10 Ω
CE
4,931,844
5,017,508
5,034,796
= 0.5 V
(T
J
CES
= 25°C unless otherwise specified)
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
min.
14
Characteristic Values
2090
typ.
0.25
200
236
440
6,162,665
6,259,123 B1
6,306,728 B1
21
94
34
84
15
37
47
86
max.
0.42 K/W
K/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
A
6,683,344
6,710,405B2
6,710,463
TO-268 Outline
TO-247 AD Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
Dim.
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
2
1
2
1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
13.80
15.85
18.70
Millimeter
4.7
2.2
2.2
1.0
1.15
13.3
2.40
1.20
1.00
3.80
6,727,585
6,759,692
6771478 B2
.4
Min.
5.45 BSC
Millimeter
4.9
2.7
.02
1.9
0.25 BSC
.4
IXGH 25N160
IXGT 25N160
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
14.00
16.05
19.10
5.3
2.6
1.4
Max.
1.45
13.6
2.70
1.40
1.15
4.10
.8
e
5.1
2.9
.25
2.1
.65
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Min.
.75
.215 BSC
.010 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
Max.
.057
.055
.045
.161
.201
.114
.010
.026
.551
.632
.535
.752
.106
.83