IXGH25N160 IXYS, IXGH25N160 Datasheet - Page 3

• Manufacturer Part Number: IXGH25N160
• Description: IGBT 1600V 75A TO-247
• Manufacturer: IXYS

Specifications of IXGH25N160

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1600V
• Vce(on) (max) @ Vge, Ic: 4.7V @ 20V, 100A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.6kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 35
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): 20
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2005 IXYS All rights reserved
150
125
100
150
125
100
10
75
50
25
75
50
25
0
9
8
7
6
5
4
3
2
0
7
0
0
9
1
Fig. 5. Collector-to-Emitter Voltage
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
11
vs. Gate-to-Emitter Voltage
2
13
2
V
3
V
V
GE
CE
CE
@ 125ºC
I
@ 25ºC
15
C
- Volts
- Volts
- Volts
= 150A
V
100A
4
50A
3
GE
17
V
= 25V
GE
20V
5
= 25V
19
20V
4
10V
6
15V
15V
10V
21
T
J
= 25ºC
5
23
7
25
8
6
275
250
225
200
175
150
125
100
200
180
160
140
120
100
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
75
50
25
80
60
40
20
0
0
-50
0
4
V
GE
5
2
Fig. 2. Exteded Output Characteristics
-25
= 15V
Fig. 4. Dependence of V
6
V
4
GE
Fig. 6. Input Admittance
0
= 25V
7
Junction Temperature
T
6
J
- Degrees Centigrade
8
25
V
V
8
GE
CE
@ 25ºC
20V
9
15V
- Volts
- Volts
10V
I
10
C
50
I
I
C
C
= 150A
T
10
= 100A
= 50A
J
= - 40ºC
IXGH 25N160
IXGT 25N160
125ºC
12
25ºC
75
11
CE(sat)
14
12
100
16
on
13
125
18
14
150
15
20