IXSH50N60B IXYS, IXSH50N60B Datasheet
IXSH50N60B
Specifications of IXSH50N60B
Available stocks
Related parts for IXSH50N60B
IXSH50N60B Summary of contents
Page 1
IGBT High Speed Short Circuit SOA Capability mêÉäáãáå~êó=Ç~í~=ëÜÉÉí Symbol Test Conditions 150 C CES 150 C; R CGR J V Continuous GES V Transient GEM I T ...
Page 2
... CE CES G t d(off) Remarks: Switching times may increase t for V (Clamp) > 0.8 • increased off R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. Characteristic Values ( unless otherwise specified) J min. typ. max 160 3850 440 50 167 = 0 CES 88 70 ...
Page 3
V = 15V T = 25° Volts CE Figure 1. Saturation Voltage Characteristics 100 V = 15V 125° ...
Page 4
... 100 Q - nanocoulombs g Figure 9. Gate Charge 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 Figure 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions (ON (OFF 100 and OFF C 600 100 10 1 0.1 ...