IXSH50N60B IXYS, IXSH50N60B Datasheet - Page 4

• Manufacturer Part Number: IXSH50N60B
• Description: IGBT 600V 75A SCSOA TO-247
• Manufacturer: IXYS

Specifications of IXSH50N60B

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 150
• Eoff, Typ, Tj=125°c, Igbt, (mj): 3.3
• Rthjc, Max, Igbt, (k/w): 0.5
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
0.001
0.01
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
20
16
12
1
8
4
0
Figure 7. Dependence of E
0
0
Figure 9. Gate Charge
Figure 11. Transient Thermal Resistance
V
D=0.5
D=0.1
D=0.2
D=0.05
D=0.02
D=0.01
I
CE
T
R
Single pulse
C
J
G
=50A
= 250V
25
= 125°C
= 10
20
50
Q
g
- nanocoulombs
I
C
40
75
- Amperes
0.0001
100
60
125
ON
and E
80
150
E
(ON)
D = Duty Cycle
E
OFF
(OFF)
175
0.001
100
on I
Pulse Width - Seconds
24
20
16
12
8
4
0
C
.
100
600
0.1
10
1
0.01
4
3
2
1
0
0
Figure 10. Turn-off Safe Operating Area
0
Figure 8. Dependence of E
E
E
(ON)
T
(ON)
J
100
= 125°C
10
E
(ON)
R
200
T
R
dV/dt < 5V/ns
20
J
G
G
= 125°C
.
= 6.2
V
R
CE
G
I
I
I
C
C
300
C
- Ohms
- Volts
=25A
0.1
= 100A
= 50A
30
IXSH 50N60B
400
40
ON
and E
500
50
E
E
E
(OFF)
(OFF)
(OFF)
OFF
600
60
on
1
20
15
10
5
0