IRGP4063DPBF International Rectifier, IRGP4063DPBF Datasheet - Page 6

• Manufacturer Part Number: IRGP4063DPBF
• Description: IGBT PDP N-CH 600V 96A TO-247AC
• Manufacturer: International Rectifier

Specifications of IRGP4063DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.14V @ 15V, 48A
• Current - Collector (ic) (max): 96A
• Power - Max: 330W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 96A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AC
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 96A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 330W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRGP4063DPbF
6
V
10000
CC
1000
900
800
700
600
500
400
300
200
100
100
45
40
35
30
25
20
15
10
10
= 400V; V
0
Fig. 23 - Typ. Capacitance vs. V
Fig. 19 - Typ. Diode I
0
0
Fig. 21 - Typ. Diode E
0
200
V
20
20
GE
GE
T
= 0V; f = 1MHz
= 15V; I
J
= 175°C
di F /dt (A/μs)
400
40
40
R G = 22Ω
R G = 10Ω
V CE (V)
I F (A)
R G = 100Ω
R G = 47Ω
F
= 48A; T
600
RR
60
60
RR
vs. di
Cres
Coes
vs. I
Cies
800
80
80
F
J
F
/dt
= 175°C
CE
1000
100
100
18
16
14
12
10
4000
3500
3000
2500
2000
1500
1000
8
6
4
16
14
12
10
Fig. 24 - Typical Gate Charge vs. V
V
8
8
6
4
2
0
Fig. 22 - V
Fig. 20 - Typ. Diode Q
CC
0
0
100Ω
= 400V; V
96A
10
V
I
CC
CE
Q G , Total Gate Charge (nC)
25
GE
= 400V; T
= 48A; L = 600μH
47Ω
500
12
vs. Short Circuit Time
GE
V CES = 300V
V CES = 400V
V GE (V)
di F /dt (A/μs)
48A
= 15V; T
22Ω
50
14
C
24A
= 25°C
RR
1000
10Ω
J
vs. di
= 175°C
16
75
F
/dt
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GE
18
100
1500
400
350
300
250
200
150
100
50