IXER35N120D1 IXYS, IXER35N120D1 Datasheet - Page 2

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IXER35N120D1

Manufacturer Part Number
IXER35N120D1
Description
IGBT W/DIOD TO-247 NPT3 1200V50A
Manufacturer
IXYS
Datasheet

Specifications of IXER35N120D1

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 35A
Current - Collector (ic) (max)
50A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
32
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.8
Tfi, Typ, Igbt, (ns)
50
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.6
Rthjc, Max, Igbt, (°c/w)
0.60
If, Tc=90°c, Diode, (a)
25
Rthjc, Max, Diode, (k/w)
1.2
Package Style
ISOPLUS247™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1370333

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXER35N120D1
Manufacturer:
HITACHI
Quantity:
20 000
Symbol
I
I
Symbol
V
I
t
E
R
R
Symbol
T
T
V
F
Symbol
C
Weight
© 2003 IXYS All rights reserved
Diode
F25
F90
RM
Component
rr
VJ
stg
C
F
rec(off)
ISOL
thJC
thJH
p
Conditions
T
T
Conditions
I
I
V
(per diode)
Conditions
I
mounting force with clip
Conditions
coupling capacity between shorted
pins and mounting tab in the case
F
F
ISOL
C
C
R
= 35 A; T
= 30 A; di
= 25°C
= 90°C
= 600 V; V
≤ 1 mA; 50/60 Hz
T
F
VJ
VJ
/dt = -1100 A/µs; T
GE
= 25°C
= 125°C
= 0 V
VJ
= 125°C
min.
min.
Characteristic Values
Characteristic Values
-55...+150
-55...+125
Maximum Ratings
Maximum Ratings
20...120
typ.
typ.
2.5
1.9
1.8
2.6
51
80
30
2500
6
48
25
max.
max.
2.9
1.3 K/W
K/W
mJ
V~
ns
°C
°C
pF
N
A
A
V
V
A
g
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
Diode (typ. at T
Thermal Response
IGBT
Diode
ISOPLUS 247 OUTLINE
C
C
C
C
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
S
T
U
1
2
1
2
th1
th2
th1
th2
IXER 35N120D1
= 0.067 J/K; R
= 0.175 J/K; R
= 0.039 J/K; R
= 0.090 J/K; R
V
V
20.80
15.75
19.81
13.21
15.75
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
1.65
0
Min.
0
= 0.95 V; R
= 1.26V; R
Millimeter
5.45 BSC
GE
J
21.34
16.13
20.32
13.72
16.26
= 125°C)
Max.
= 15 V; T
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
3.03
0
th1
th2
th1
th2
0
Min. Max.
= 15 m Ω
= 45 m Ω
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
= 0.108 K/W
= 0.491 K/W
= 0.337 K/W
= 0.963 K/W
Inches
J
= 125°C)
2 - 4

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