IXER35N120D1 IXYS, IXER35N120D1 Datasheet - Page 3

• Manufacturer Part Number: IXER35N120D1
• Description: IGBT W/DIOD TO-247 NPT3 1200V50A
• Manufacturer: IXYS

Specifications of IXER35N120D1

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 35A
• Current - Collector (ic) (max): 50A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 50
• Ic90, Tc=90°c, Igbt, (a): 32
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.8
• Tfi, Typ, Igbt, (ns): 50
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.6
• Rthjc, Max, Igbt, (°c/w): 0.60
• If, Tc=90°c, Diode, (a): 25
• Rthjc, Max, Diode, (k/w): 1.2
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1370333

I
V
© 2003 IXYS All rights reserved
I
C
C
GE
120
100
120
100
80
60
40
20
A
A
20
15
10
80
60
40
20
V
0
5
0
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5
0
0
4
T
VJ
V
CE
= 125°C
1
= 20 V
6
40
Typ. turn on gate charge
2
8
V
GE
80
= 17 V
3
T
VJ
10
= 25°C
4
120
V
V
CE
GE
12
5
V
I
C
Q
CE
G
160
T
= 600 V
= 35 A
VJ
14
= 25°C
6
nC
15 V
13 V
11 V
V
9 V
V
200
7
16
Z
I
0.0001
C
thJC
0.001
Fig. 6
I
Fig. 2 Typ. output characteristics
Fig. 4
F
0.01
120
100
K/W
0.1
10
A
80
60
40
20
90
75
60
45
30
15
A
0.001
0
1
0
0
0
Typ. forward characteristics of
free wheeling diode
Typ. transient thermal impedance
1
T
0.01
VJ
1
= 125°C
2
single pulse
IXER 35N120D1
3
0.1
V
2
GE
= 17 V
4
V
V
F
T
CE
VJ
5
t
= 25°C
1
3
T
VJ
= 125°C
6
MUBW3512E7
V
13 V
15 V
11 V
diode
IGBT
9 V
s
V
3 - 4
10
7
4