IXGT32N170 IXYS, IXGT32N170 Datasheet - Page 3

• Manufacturer Part Number: IXGT32N170
• Description: IGBT NPT 1700V 75A TO-268
• Manufacturer: IXYS

Specifications of IXGT32N170

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 3.3V @ 15V, 32A
• Current - Collector (ic) (max): 75A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 35
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.3
• Tfi, Typ, Igbt, (ns): 250
• Eoff, Typ, Tj=125°c, Igbt, (mj): 14
• Rthjc, Max, Igbt, (°c/w): 0.35
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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64
56
48
40
32
24
16
64
56
48
40
32
24
16
8
0
8
0
8
7
6
5
4
3
2
1
0.5
0
6
Fig. 5. Collector-to-Em itter Voltage
7
1
Fig. 3. Output Characteristics
Fig. 1. Output Characte ristics
1
vs . Gate-to-Em iiter voltage
8
1.5
9
2
2
@ 125 Deg. C
V
10
V
@ 25 Deg. C
GE
C E
V
V
V
G E
2.5
CE
GE
11
= 17V
- Volts
15V
13V
11V
- Volts
= 17V
- Volts
3
15V
13V
11V
12
3
13
I
3.5
C
4
T
= 64A
J
14
= 25ºC
32A
16A
7V
4
9V
15
5
4.5
9V
7V
16
17
5
6
240
210
180
150
120
100
1.8
1.6
1.4
1.2
0.8
0.6
90
60
30
90
80
70
60
50
40
30
20
10
1
0
0
-50
Fig. 2. Extended Output Characte ristics
0
5
V
Fig. 4. De pende nce of V
T
-25
GE
J
2
Fig. 6. Input Adm ittance
= 125ºC
= 15V
-40ºC
25ºC
6
0
T
J
4
- Degrees Centigrade
Tem perature
@ 25 de g. C
25
V
V
GE
V
7
G E
6
C E
= 17V
- Volts
50
- Volts
IXGH 32N170
IXGT 32N170
8
8
75
I
I
I
CE(sat)
10
C
C
C
= 32A
= 16A
= 64A
100
15V
13V
9
11V
9V
7V
on
12
125
150
14
10