IXGT32N170 IXYS, IXGT32N170 Datasheet - Page 4

• Manufacturer Part Number: IXGT32N170
• Description: IGBT NPT 1700V 75A TO-268
• Manufacturer: IXYS

Specifications of IXGT32N170

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 3.3V @ 15V, 32A
• Current - Collector (ic) (max): 75A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 35
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.3
• Tfi, Typ, Igbt, (ns): 250
• Eoff, Typ, Tj=125°c, Igbt, (mj): 14
• Rthjc, Max, Igbt, (°c/w): 0.35
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
45
40
35
30
25
20
15
10
22
20
18
16
14
12
10
15
12
5
0
8
9
6
3
0
16
0
0
T
R
R
V
V
J
V
I
I
C
G
GE
CE
G
G
= -40ºC
CE
= 32A
= 1 0mA
= 15Ω - - - - -
125ºC
= 3Ω
= 1020V
= 15V
25ºC
= 850V
Fig. 7. Transconductance
16
24
Fig. 9. Dependence of E
30
Fig. 11. Gate Charge
Q
32
32
G
I
I
C
- nanoCoulombs
60
C
- Amperes
- Amperes
48
40
90
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
64
T
48
off
J
= 125ºC
on I
T
J
120
= 25ºC
c
80
56
150
96
64
10000
1000
100
25
23
21
19
17
15
13
11
22
20
18
16
14
12
10
10
8
25
0
0
T
V
V
R
R
V
V
J
GE
CE
G
G
GE
CE
= 125ºC
35
f = 1 MHz
Fig. 8. Dependence of E
= 15Ω - - - - -
= 1020V
= 3Ω
= 15V
Fig. 10. Dependence of E
5
= 1020V
= 15V
10
45
Fig. 12. Capacitance
T
10
J
55
- Degrees Centigrade
Tem perature
R
15
V
65
20
G
C E
- Ohms
75
- Volts
20
IXGH 32N170
IXGT 32N170
30
85
25
I
I
I
C
C
C
off
95
6,534,343
= 64A
= 32A
= 16A
C
C
C
I
C
I
ies
oes
res
on R
C
30
off
I
= 64A
C
= 32A
105 115 125
40
on
= 16A
G
35
6,583,505
40
50