GT60M303(Q) Toshiba, GT60M303(Q) Datasheet - Page 3

• Manufacturer Part Number: GT60M303(Q)
• Description: IGBT 900V DUAL 60A TO-3P LH
• Manufacturer: Toshiba

Specifications of GT60M303(Q)

• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 60A
• Current - Collector (ic) (max): 60A
• Power - Max: 170W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 900 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 500 nA
• Power Dissipation: 170 W
• Continuous Collector Current Ic Max: 60 A
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

GT60M303
3
2006-11-01