IGD01N120H2 Infineon Technologies, IGD01N120H2 Datasheet - Page 8

• Manufacturer Part Number: IGD01N120H2
• Description: IGBT 1200V 3.2A 28W TO252-3
• Manufacturer: Infineon Technologies

Specifications of IGD01N120H2

• Package / Case: DPak, TO-252 (5 leads + tab)
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 1A
• Current - Collector (ic) (max): 3.2A
• Power - Max: 28W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 3.2 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: DPAK (TO-252)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IGD01N120H2XT

Power Semiconductors
Figure 17. IGBT transient thermal
impedance as a function of pulse width
(D = t
10
10
10
100pF
Figure 19. Typical capacitance as a
function of collector-emitter voltage
(V
-1
-2
0
10pF
K/W
K/W
K/W
GE
p
V
1µs
/ T)
CE
0V
0.2
0.05
0.02
= 0V, f = 1MHz)
D=0.5
0.1
0.01
,
single pulse
COLLECTOR
10µs
t
p
,
PULSE WIDTH
10V
100µs
R
2.5069
1.1603
0.8327
R , ( K / W )
1
C
-
EMITTER VOLTAGE
1
=
1
/ R
1ms
1
20V
C
0.00066
0.00021
0.00426
2
=
10ms
, ( s )
2
/R
R
2
2
30V
100ms
C
C
C
rss
oss
iss
8
Figure 20. Typical turn off behavior, hard
switching
(V
Dynamic test circuit in Figure E)
1000V
GE
800V
600V
400V
200V
Figure 18. Typical gate charge
(I
20V
15V
10V
0V
=15/0V, R
C
5V
0V
0nC
= 1A)
0.0
0.2
U
Q
G
=220Ω, T
CE
t
GE
p
0.4
,
=240V
,
5nC
PULSE WIDTH
GATE CHARGE
0.6
IGD01N120H2
IGP01N120H2
j
0.8
= 150 C,
1.0
10nC
U
CE
Rev. 2.4 Sept. 07
=960V
1.2
1.0A
0.8A
0.6A
0.4A
0.2A
0.0A
15nC