IGP01N120H2 Infineon Technologies, IGP01N120H2 Datasheet

no-image

IGP01N120H2

Manufacturer Part Number
IGP01N120H2
Description
IGBT 1200V 3.2A 28W TO220-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of IGP01N120H2

Package / Case
TO-220-3 (Straight Leads)
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 1A
Current - Collector (ic) (max)
3.2A
Power - Max
28W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
3.2 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Switching Frequency
HighSpeed2 30-100 kHz
Package
TO-220
Vce (max)
1,200.0 V
Ic(max) @ 25°
3.2 A
Ic(max) @ 100°
1.3 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IGP01N120H2
Manufacturer:
INFINEON
Quantity:
12 500
HighSpeed 2-Technology
Type
Maximum Ratings
Parameter
T
T
V
T
Designed for:
2
for 1200V applications offers:
nd
E
generation HighSpeed-Technology
f
f
T
V
I
t
I
T
E
T
Package
Symbol
V
I
I
-
V
P
T
T
Ordering Code
Value
Unit

Related parts for IGP01N120H2

IGP01N120H2 Summary of contents

Page 1

HighSpeed 2-Technology Designed for generation HighSpeed-Technology for 1200V applications offers Type V I Maximum Ratings Parameter Package Symbol ...

Page 2

Thermal Resistance Parameter Characteristic Electrical Characteristic, T Parameter Static Characteristic Dynamic Characteristic Symbol Conditions Symbol Conditions ...

Page 3

Switching Characteristic, Inductive Load, Parameter IGBT Characteristic Switching Characteristic, Inductive Load, Parameter IGBT Characteristic Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic T Symbol Conditions Symbol Conditions ...

Page 4

Figure 1. Collector current as a function of switching frequency Figure 3. Power dissipation as a function of case temperature Figure 2. Safe ...

Page 5

V V Figure 5. Typical output characteristics Figure 7. Typical transfer characteristics Figure 6. Typical output characteristics T T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature V ...

Page 6

I Figure 9. Typical switching times as a function of collector current Figure 11. Typical switching times as a function of junction temperature ...

Page 7

Figure 13. Typical switching energy losses as a function of collector current Figure 15. Typical switching energy losses as a function of junction temperature ...

Page 8

Figure 17. IGBT transient thermal impedance as a function of pulse width Figure 19. Typical capacitance as a function of collector-emitter voltage Figure ...

Page 9

Figure 21. Typical turn off behavior, soft switching ...

Page 10

dimensions symbol dimensions symbol ...

Page 11

dimensions symbol [mm] symbol ...

Page 12

Figure A. Definition of switching times Figure B. Definition of switching losses i / /dt I Figure C. Definition of diodes switching characteristics Figure ...

Page 13

... Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! Information Warnings ...

Related keywords