IGP01N120H2 Infineon Technologies, IGP01N120H2 Datasheet
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IGP01N120H2
Specifications of IGP01N120H2
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IGP01N120H2 Summary of contents
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HighSpeed 2-Technology Designed for generation HighSpeed-Technology for 1200V applications offers Type V I Maximum Ratings Parameter Package Symbol ...
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Thermal Resistance Parameter Characteristic Electrical Characteristic, T Parameter Static Characteristic Dynamic Characteristic Symbol Conditions Symbol Conditions ...
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Switching Characteristic, Inductive Load, Parameter IGBT Characteristic Switching Characteristic, Inductive Load, Parameter IGBT Characteristic Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic T Symbol Conditions Symbol Conditions ...
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Figure 1. Collector current as a function of switching frequency Figure 3. Power dissipation as a function of case temperature Figure 2. Safe ...
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V V Figure 5. Typical output characteristics Figure 7. Typical transfer characteristics Figure 6. Typical output characteristics T T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature V ...
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I Figure 9. Typical switching times as a function of collector current Figure 11. Typical switching times as a function of junction temperature ...
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Figure 13. Typical switching energy losses as a function of collector current Figure 15. Typical switching energy losses as a function of junction temperature ...
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Figure 17. IGBT transient thermal impedance as a function of pulse width Figure 19. Typical capacitance as a function of collector-emitter voltage Figure ...
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Figure 21. Typical turn off behavior, soft switching ...
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dimensions symbol dimensions symbol ...
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dimensions symbol [mm] symbol ...
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Figure A. Definition of switching times Figure B. Definition of switching losses i / /dt I Figure C. Definition of diodes switching characteristics Figure ...
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... Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! Information Warnings ...