SKB02N60 Infineon Technologies, SKB02N60 Datasheet
SKB02N60
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SKB02N60 Summary of contents
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... Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. for target applications http://www.infineon.com/igbt Marking C CE(sat) j 2.2V K06N60 150 C jmax jmax 1 SKB02N60 G PG-TO-263-3-2 Package PG-TO-263-3-2 Symbol Value V 600 6.0 2 ...
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... Symbol Conditions unless otherwise specified Symbol Conditions (one layer thick) copper area for 2 SKB02N60 Max. Value 4 Value min. Typ. max. 600 - = 1.7 1.9 2.4 - 2.2 2.7 1.2 1.4 1.8 - 1.25 1. 250 = 100 = 1.6 - 142 170 - Rev. 2.2 Unit K/W Unit - Oct. 07 ...
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... =150 C j Symbol Conditions Energy losses include “tail” and diode reverse recovery SKB02N60 Value Unit min. typ. max 259 311 - 0.036 0.041 mJ - 0.028 0.036 - 0.064 0.078 - 130 - 118 - - 1 180 - A/ s Value Unit min. typ. max 287 344 - 0.054 0.062 mJ - 0.043 ...
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... 10A 1A 0.1A 0.01A 1V 100kHz V CE Figure 2. Safe operating area ( 25°C 125°C Figure 4. Collector current as a function of case temperature (V 15V SKB02N60 200 s 1ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE = 150 50°C 75°C 100°C 125° CASE TEMPERATURE C 150 C) j Rev. 2.2 ...
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... COLLECTOR CE Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SKB02N60 =20V 15V 13V 11V EMITTER VOLTAGE 0°C 50°C 100°C 150°C , JUNCTION TEMPERATURE Rev ...
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... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.15mA SKB02N60 t d(off) t d(on 100 200 300 R , GATE RESISTOR G = 150 400V 2A, C max. 0°C 50° ...
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... Dynamic test circuit in Figure E) D=0.5 0 K/W ts 0 K/W 0.01 E off -2 10 K/W 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SKB02N60 and E include losses off 100 200 300 R , GATE RESISTOR G = 150 400V 2A 1.026 0.035 1.3 3.62*10 1.69 4 ...
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... GE 40A 30A 20A 10A 0A 14V 15V 10V 12V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SKB02N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V , - GATE EMITTER VOLTAGE = 150 C) j Rev ...
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... F Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V = 200V Dynamic test circuit in Figure E) 9 SKB02N60 60A/ s 100A/ s 140A/ s 180A DIODE CURRENT SLOPE = 125 C, j 60A/ s 100A/ s 140A/ s ...
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... Figure 27. Diode transient thermal impedance as a function of pulse width ( 2.5V 2.0V 1.5V 1.0V 2.0V -40°C Figure 26. Typical diode forward voltage as a function of junction temperature , ( 6.40*10 -4 8.79*10 -4 1.19* 10ms 100ms 1s 10 SKB02N60 0°C 40°C 80°C 120° JUNCTION TEMPERATURE j Rev. 2.2 Oct. 07 ...
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... PG-TO263-3-2 11 SKB02N60 Rev. 2.2 Oct. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses SKB02N60 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =180pF. Rev. 2.2 Oct. 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SKB02N60 13 Rev. 2.2 Oct. 07 ...