IKB10N60T Infineon Technologies, IKB10N60T Datasheet - Page 10

• Manufacturer Part Number: IKB10N60T
• Description: IGBT 600V 20A 110W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB10N60T

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 110W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 25. Typical reverse recovery current
Figure 27. Typical diode forward current as
30A
20A
10A
14A
12A
10A
0A
8A
6A
4A
2A
0A
0V
200A/µs
di
as a function of diode current
slope
( V
Dynamic test circuit in Figure E)
a function of forward voltage
F
/dt ,
V
R
F
= 400V, I
,
400A/µs
DIODE CURRENT SLOPE
FORWARD VOLTAGE
1V
T
F
J
175°C
= 10A,
=25°C
600A/µs
2V
T
J
T
=175°C
800A/µs
J
=25°C
10
TrenchStop
Figure 26. Typical diode peak rate of fall of
Figure 28. Typical diode forward voltage as a
2,0V
1,5V
1,0V
0,5V
0,0V
-700A/µs
-600A/µs
-500A/µs
-400A/µs
-300A/µs
-200A/µs
-100A/µs
-50°C
0A/µs
®
400A/µs
Series
di
reverse recovery current as a
function of diode current slope
( V
Dynamic test circuit in Figure E)
function of junction temperature
T
F
J
/dt ,
R
,
0°C
=400V, I
JUNCTION TEMPERATURE
DIODE CURRENT SLOPE
600A/µs
50°C
F
=10A,
IKB10N60T
100°C
Rev. 2.3 Oct. 07
800A/µs
T
T
J
=25°C
J
=175°C
150°C
I
F
=20A
10A
5A
p