SGP07N120 Infineon Technologies, SGP07N120 Datasheet
SGP07N120
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SGP07N120 Summary of contents
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... J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors for target applications http://www.infineon.com/igbt Marking C off j 0.7mJ GP07N120 PG-TO-220-3-1 150 C Symbol jmax 150 SGP07N120 G PG-TO-220-3-1 Package Value 1200 C E 16.5 7 125 -55...+150 260 Rev. 2 Unit Sep 07 ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors Symbol Conditions PG-TO-220-3 Symbol Conditions =1200V,V = =0V,V =20V SGP07N120 Max. Value Unit 1 K/W 62 Value Unit min. typ. max. 1200 - - V 2.5 3.1 3.6 - 3.7 4 100 - - 400 - - 100 720 870 Rev. 2.3 Sep 07 ...
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... C j Symbol Conditions Energy losses include E “tail” and diode t s reverse recovery. 3 SGP07N120 Value Unit min. typ. max 440 570 - 0.6 0 0.4 0.55 - 1.0 1.35 Value Unit min. typ. max 490 590 - 30 ...
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... Figure 2. Safe operating area ( 20A 15A 10A 5A 0A 100°C 125°C 25°C Figure 4. Collector current as a function of case temperature ( SGP07N120 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125° CASE TEMPERATURE C 15V, T ...
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... Figure 6. Typical output characteristics (T = 150 11V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGP07N120 =17V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE I =16A =4A C 0°C 50°C 100°C 150°C , JUNCTION TEMPERATURE j Rev. 2.3 Sep 07 ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA SGP07N120 t d(off d(on 100 R , GATE RESISTOR G = 150 +15V/0V 8A max. typ. min. 0°C 50° ...
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... Fig K K off - K/W 100°C 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width ( SGP07N120 *) E and E include losses on ts due to diode recovery 100 R , GATE RESISTOR G = 150 +15V/0V 8A D=0.5 0.2 0.1 0. 0.1020 0.77957 0.02 ...
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... Figure 18. Typical capacitance as a function of collector-emitter voltage ( 1MHz) GE 150A 100A 50A 0A 14V 15V 10V Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V V 8 SGP07N120 10V 20V 30V , - COLLECTOR EMITTER VOLTAGE 12V 14V 16V 18V GATE EMITTER VOLTAGE ...
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... Power Semiconductors PG-TO220-3-1 9 SGP07N120 Rev. 2.3 Sep 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SGP07N120 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF Rev. 2.3 Sep 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SGP07N120 11 Rev. 2.3 Sep 07 ...