SGB15N60 Infineon Technologies, SGB15N60 Datasheet - Page 5

• Manufacturer Part Number: SGB15N60
• Description: IGBT NPT 600V 31A 139W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SGB15N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 15A
• Current - Collector (ic) (max): 31A
• Power - Max: 139W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 31 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 31.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB15N60XT

50A
45A
40A
35A
30A
25A
20A
15A
10A
50A
45A
40A
35A
30A
25A
20A
15A
10A
Figure 7. Typical transfer characteristics
(V
5A
0A
5A
0A
Figure 5. Typical output characteristics
(T
0V
CE
0V
j
= 25 C)
= 10V)
V
CE
V
V
,
GE
2V
GE
1V
COLLECTOR
=20V
15V
13V
11V
,
9V
7V
5V
GATE
4V
-
2V
EMITTER VOLTAGE
-
EMITTER VOLTAGE
6V
3V
T
j
+150°C
=+25°C
-55°C
8V
4V
10V
SGP15N60,
5V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
50A
45A
40A
35A
30A
25A
20A
15A
10A
Figure 6. Typical output characteristics
(T
5A
0A
GE
j
0V
= 150 C)
= 15V)
V
CE
-50°C
,
T
V
COLLECTOR
j
GE
,
1V
JUNCTION TEMPERATURE
=20V
15V
13V
11V
9V
7V
5V
0°C
2V
-
EMITTER VOLTAGE
SGW15N60
50°C
SGB15N60
3V
100°C
I
I
C
C
= 30A
= 15A
4V
150°C
Jul-02
5V