IGW03N120H2 Infineon Technologies, IGW03N120H2 Datasheet
IGW03N120H2
Specifications of IGW03N120H2
Related parts for IGW03N120H2
IGW03N120H2 Summary of contents
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... J-STD-020 and JESD-022 Power Semiconductors 2 for target applications http://www.infineon.com/igbt Marking off j 0.15mJ G03H1202 150 C 0.15mJ 150°C G03H1202 Symbol jmax IGP03N120H2 IGW03N120H2 PG-TO-247-3-21 PG-TO-220-3-1 Package PG-TO-247-3-21 PG-TO-220-3-1 Value Unit 1200 V A 9.6 3.9 9.9 9 62.5 W -40...+150 260 Rev. 2.5 Sept. 07 ...
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... PG- TO- 220- 3 PG-TO-247-3-21 Symbol Conditions V V =0V, I =300 150 = 150 =20V =20V =25V =0V f=1MHz = =15V PG- TO- 220- 3-1 E PG-TO-247-3-21 2 IGP03N120H2 IGW03N120H2 Max. Value Unit 2.0 K Value Unit min. Typ. max. 1200 - - V - 2.2 2 2.4 - 2 100 205 - Rev. 2.5 Sept. 07 ...
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... 3A =15V/0V 80nH =40pF E Energy losses include “tail” and diode reverse recovery. Symbol Conditions 3A =15V/0V 150 IGP03N120H2 IGW03N120H2 Value Unit min. typ. max 281 - - 0. 0. 0.29 - Value Unit min. typ. max 340 - - 0. 0. 0.48 - Value Unit min. typ. max. ...
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... V Figure 2. Safe operating area ( 12A 10A 125°C 25°C Figure 4. Collector current as a function of case temperature (V 15V IGP03N120H2 IGW03N120H2 100 s 500 s DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125°C 150° ...
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... CE Power Semiconductors 10A =15V COLLECTOR CE Figure 6. Typical output characteristics (T = 150 -50° JUNCTION TEMPERATURE j Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IGP03N120H2 IGW03N120H2 12V 10V EMITTER VOLTAGE =1.5A C 0°C 50°C 100°C 150°C Rev. 2.5 Sept. 07 ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig. -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.09mA IGP03N120H2 IGW03N120H2 t d(off d(on 100 150 R , GATE RESISTOR G = 150 +15V/0V 3A max. typ. min. 0°C 50° ...
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... G dynamic test circuit in Fig 0.16mJ ts 0.12mJ 0.08mJ E off 0.04mJ 0.00mJ 0V/us 150°C Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig IGP03N120H2 IGW03N120H2 and E include losses due to diode recovery off 100 150 200 250 R , GATE RESISTOR ...
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... Figure 17. Typical gate charge (I = 3A) C 1000V 800V C iss 600V 400V C oss 200V C rss 0V 30V 0.0 Figure 20. Typical turn off behavior, hard switching (V =15/0V Dynamic test circuit in Figure E) 8 IGP03N120H2 IGW03N120H2 U =240V CE U =960V CE 10nC 20nC 30nC Q , GATE CHARGE 0.2 0.4 0.6 0.8 1.0 1 ...
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... PULSE WIDTH p Figure 21. Typical turn off behavior, soft switching (V =15/0V, R =82Ω 150 Dynamic test circuit in Figure E) Power Semiconductors 2.4 2.8 9 IGP03N120H2 IGW03N120H2 Rev. 2.5 Sept. 07 ...
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... Power Semiconductors PG-TO220-3-1 10 IGP03N120H2 IGW03N120H2 Rev. 2.5 Sept. 07 ...
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... PG-TO247-3-21 Power Semiconductors IGP03N120H2 IGW03N120H2 11 Rev. 2.5 Sept. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IGP03N120H2 IGW03N120H2 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit ½ L öö DUT (Diode ½ L Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor C ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IGP03N120H2 IGW03N120H2 13 Rev. 2.5 Sept. 07 ...