IKW03N120H2 Infineon Technologies, IKW03N120H2 Datasheet - Page 14

• Manufacturer Part Number: IKW03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IKW03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
14
i,v
p(t)
V
DC
T (t)
j
I
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L = 180nH,
Stray capacitor C = 40pF,
Relief capacitor C
ZVT switching)
F
r
1
di /dt
1
r
F
I
1
r r m
(Diode)
R
DUT
½ L
G
öö
½ L
IKW03N120H2
IKP03N120H2
r
2
2
r
t
2
S
Q
Q =Q
t =t
S
r
r r
r r
Rev. 2.5 Sept. 08
= 4nF (only for
t
r r
S
Q
S
+
(IGBT)
90% I
F
DUT
t
+
L
F
Q
t
F
F
r r m
r
di
C
10% I
n
n
r r
r
n
/dt
r r m
C
r
V
T
t
R
C