IKP20N60T Infineon Technologies, IKP20N60T Datasheet
IKP20N60T
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IKP20N60T Summary of contents
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... T Marking CE(sat),Tj=25°C j,max 1.5V K20T60 175 C 1.5V K20T60 175 C Symbol V I jmax C I jmax 600V, T 175 jmax 100 jmax IKP20N60T IKW20N60T Series G PG-TO-247-3-21 PG-TO-220-3-1 Package PG-TO-220-3-1 PG-TO-247-3-21 Value 600 166 -40...+175 j -55...+175 260 Rev. 2.4 Sep Unit ...
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... Power Semiconductors ® TrenchStop Series Symbol Conditions Symbol Conditions . 0µ 150 IKP20N60T IKW20N60T Max. Value Unit 0.9 K/W 1 Value Unit min. Typ. max. 600 - - V - 1.5 2. 1.65 2.05 - 1.6 - 4.1 4.9 5.7 µ 1000 - - 100 Ω 1100 - - 120 - 183 Rev. 2.4 Sep. 07 ...
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... =175 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKP20N60T IKW20N60T Value Unit min. Typ. max 199 - - 0.31 - µ 711 - A/ s Value Unit min. Typ. max 223 - - 176 - ns - 1.46 - µ ...
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... Power Semiconductors ® TrenchStop 10A 1A 0.1A 10kHz 100kHz 1V Figure 2. Safe operating area = 400V 30A 25A 20A 15A 10A 5A 0A 25°C Figure 4. Collector current as a function of 4 IKP20N60T IKW20N60T Series t p 10µs 50µs 1ms 10ms DC 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 C; C ...
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... Power Semiconductors ® TrenchStop 50A V GE 40A 30A 20A 10A Figure 6. Typical output characteristic 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0° Figure 8. Typical collector-emitter 5 IKP20N60T IKW20N60T Series =20V 15V 13V 11V COLLECTOR EMITTER VOLTAGE 175° 50°C 100°C 150°C ...
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... Figure 10. Typical switching times 12Ω d(off in d( -50°C Figure 12. Gate-emitter threshold voltage as = 400V, =12Ω IKP20N60T IKW20N60T Series t d(off GATE RESISTOR G function of gate resistor (inductive load 175° 400V 0/15V 20A Dynamic test circuit in Figure E) m ax. typ. 0°C 50°C 100° ...
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... Figure 14. Typical switching energy losses = 175°C, = 12Ω, G 2. 1.6m J 1.4m J 1.2m J 1.0m J 0.8m J 0.6m J 0.4m J 0.2m J 0.0m J 300V Figure 16. Typical switching energy losses = 400V, = 12Ω IKP20N60T IKW20N60T Series *) clu rec GATE RESISTOR function of gate resistor (inductive load 175° 400V 0/15V 20A, ...
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... V Figure 18. Typical capacitance as a function 12µs 10µs 8µs 6µs 4µs 2µs 0µs 10V 18V Figure 20. Short circuit withstand time IKP20N60T IKW20N60T Series 10V 20V 30V 40V , - COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage ( V =0V MHz) GE 11V 12V 13V ...
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... T =175°C J 0.8µC 0.6µC 0.4µC T =25°C J 0.2µC 600A/µs 1200A/µs Figure 24. Typical reverse recovery charge 9 IKP20N60T IKW20N60T Series D =0.5 0 0.13483 9.207*10 0.58146 1.821*10 0.1 0.44456 1.47*10 0.33997 1.254* ...
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... Figure 26. Typical diode peak rate of fall of 2.0V 1.5V 1.0V 0.5V 0.0V 0°C 2V Figure 28. Typical diode forward voltage IKP20N60T IKW20N60T Series T =25° =175°C J 600A/µs 900A/µs 1200A/µs di /dt , DIODE CURRENT SLOPE ...
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... PG-TO-220-3-1 Power Semiconductors ® TrenchStop Series 11 IKP20N60T IKW20N60T Rev. 2.4 Sep. 07 ...
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... PG-TO247-3-21 Power Semiconductors ® TrenchStop Series 12 IKP20N60T IKW20N60T Rev. 2.4 Sep. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit 13 IKP20N60T IKW20N60T Rev. 2.4 Sep. 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 14 IKP20N60T IKW20N60T Rev. 2.4 Sep. 07 ...