IGW08T120 Infineon Technologies, IGW08T120 Datasheet - Page 7

• Manufacturer Part Number: IGW08T120
• Description: IGBT 1200V 16A 70W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW08T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 8A
• Current - Collector (ic) (max): 16A
• Power - Max: 70W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 8A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 70W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.0 A
• Ic(max) @ 100°: 8.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
6,0mJ
4,0mJ
2,0mJ
0,0mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
25°C
5A
*) E
*) E
due to diode recovery
T
due to diode recovery
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
on
on
J
I
CE
GE
50°C
,
C
and E
and E
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
COLLECTOR CURRENT
10A
ts
ts
include losses
include losses
75°C
C
GE
=8A, R
=0/15V, R
J
CE
=150°C,
100°C
=600V,
G
15A
=81Ω,
G
=81Ω,
125°C
E
E
E
E
E
on
ts
off
on
E
off
E
*
7
*
E
TrenchStop
*
on
ts
off
*
*
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
3,2 mJ
2,8 mJ
2,4 mJ
2,0 mJ
1,6 mJ
1,2 mJ
0,8 mJ
0,4 mJ
0,0 mJ
3mJ
2mJ
1mJ
0mJ
400V
®
E
E
E
E
E
5Ω
ts
V
off
on
Series
*) E
*
off
on
*
CE
*
*) E
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
due to diode recovery
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
,
on
CE
GE
due to diode recovery
COLLECTOR
500V
and E
on
=600V, V
=0/15V, I
50Ω
R
and E
G
,
ts
GATE RESISTOR
include losses
ts
600V
include losses
100Ω
-
C
GE
EMITTER VOLTAGE
IGW08T120
=8A, R
=0/15V, I
J
J
=150°C,
=150°C,
700V
150Ω
Rev. 2.6
G
=81Ω,
C
=8A,
800V
200Ω
Nov. 09
E
E
E
E
E
on
off
on
ts
off
*
*
*
q