IGB50N60T Infineon Technologies, IGB50N60T Datasheet - Page 4

• Manufacturer Part Number: IGB50N60T
• Description: IGBT 600V 100A 333W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB50N60T

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 50A
• Current - Collector (ic) (max): 100A
• Power - Max: 333W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 333W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 100.0 A
• Ic(max) @ 100°: 50.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

140A
120A
100A
Figure 1. Collector current as a function of
Figure 3. Power dissipation as a function of
300W
250W
200W
150W
100W
80A
60A
40A
20A
50W
0A
0W
100H z
25°C
switching frequency
(T
V
case temperature
(T
50°C
f,
GE
T
j
j
SWITCHING FREQUENCY
C
T
1kH z
,
= 0/+15V, R
I
I
175 C, D = 0.5, V
175 C)
C
c
c
CASE TEMPERATURE
=80°C
75°C
T
C
=110°C
100°C 125°C 150°C
10kH z
G
= 7 )
CE
= 400V,
100kH z
4
TrenchStop
Figure 2. Safe operating area
Figure 4. Collector current as a function of
100A
10A
80A
60A
40A
20A
1A
0A
1V
25°C
®
V
Series
CE
(D = 0, T
V
case temperature
(V
,
GE
COLLECTOR
T
GE
=15V)
C
,
10V
CASE TEMPERATURE
15V, T
75°C
C
= 25 C, T
-
EMITTER VOLTAGE
j
IGB50N60T
100V
175 C)
DC
Rev. 2.5 04.03.2009
j
175 C;
125°C
1000V
50µs
t
10µs
1ms
10ms
p
=2µs
p